New Schottky diode based entirely on nickel aluminate spinel/p-silicon using the sol–gel spin coating approach

Abstract

A new kind of p-type Schottky diode was successfully fabricated based entirely on Al/NiAl2O4/p-Si/Al spinel using the sol–gel spin coating approach. The estimated values of particle size and surface roughness of the as prepared NiAl2O4 film are found to be 168–362nm and 27.735nm, respectively. The electrical properties of the Al/NiAl2O4/p-Si/Al diode were characterized in terms of current–voltage (I–V) and capacitance–voltage (C–V) techniques. The rectification ratio and ideality factor of the Al/NiAl2O4/p-Si/Al diode is decreased by increasing temperature. It was observed that there is a difference between the ideality factor obtained from the forward bias semi-log I–V plot and dV/d(lnI) vs. I plot. The electrical parameters at room temperature of the as fabricated Al/NiAl2O4/p-Si/Al diode such as built-in potential, acceptor concentration, barrier height different temperatures and frequencies were determined from the capacitance–voltage measurements. It is found that the values of the acceptor concentration are decreased, while the values of the built-in potential are increased with increasing frequencies of the diode.