Abstract
In this article, the electrical activity of an interfacial grain boundary in a Direct-Silicon-Bonded wafer was examined by C-V and capacitance transient techniques using Al Schottky diodes. The samples consisted a 2.3 μm thick (110) Si layer on a p-type (100) Si substrate produced by hydrophilic wafer bonding, cleavage, and epi-thickening. Effects of Fe contamination and hydrogenation on the boundary's electrical properties were also examined. GB states below but close to the charge neutral level were studied. It was found that for the relatively clean interfacial bonding GB, the density of GB states (NT) is ~6x1012 eV-1cm-2, and the charge neutral level is at ~0.53 eV from the valance band. NT increased to over 2x1013 eV-1cm-2 after Fe contamination, which was reduced to ~1x1013 eV-1cm-2 after a hydrogenation treatment. The charge neutral level, which shifted towards the conduction band after Fe contamination, was reversed after hydrogenation. The electron emission rate from the GB donor states was found to be about two orders of magnitude larger than the corresponding hole emission rate.
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