Amorphization of Thin Si Layers by Arsenic Ion Implantation

Abstract

Annealing of an amorphized Si layer formed by implantation into an SOI (silicon‐on‐insulator) Si layer was performed. Arsenic ions are implanted at 100 keV and 5.0 × 1015 ions/cm2 into thin (56 nm thick) and thick (1.5 μm thick) Si layers. Rutherford backscattering spectrometry and transmission electron microscope measurements show the formation of a 130 nm thick amorphous layer by this implantation. In the thick Si layer, recrystallization occurred at the amorphous/crystalline interface with an annealing at 850°C. However, no recrystallization occurred within the thin Si layer because a crystalline interface did not exist. Thus, a high resistivity, amorphous n‐Si layer with low electron mobility was formed.