Abstract
Copper phthalocyanine (CuPc)/Aluminum (Al) Schottky diode solar cells were studied. The thickness of the CuPc layer was varied from 15 nm to 140 nm. Short circuit current densities (Jsc) increased with thickness from 0.042 mA/cm2 at 15 nm to 0.124 mA/cm2 at 120 nm reaching saturation at that level. Open circuit voltages (Voc) increased from 220 mV at 15 nm to 907 mV at 140 nm. Analysis of the current-voltage characteristics indicated that tunneling and interface recombination current mechanisms are important components of the current transport at the CuPc/Al junction.
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