Abstract
We deposited GaTe thin films with electrochemical growth technique on p-Si (100) substrate and investigated their structural and electrical properties. The electrical characteristics of the Ti/GaTe/p-Si/Al Schottky diode (SD) were determined by means of I–V (current–voltage) and C–V (capacitance–voltage) measurements. The diodes were irradiated with high energy (18 MeV) and low doses (1.38 × 1010 e− cm−2) electrons. The ideality factor values for Ti/GaTe/p-Si/Al structure were calculated as 1.27 and 1.53 and the barrier heights have been obtained as 0.739 and 0.706 eV from I–V measurements before and after each electron irradiations, respectively. Also, the parameters such as built-in potential, Fermi levels, acceptor concentration and barrier height of the Ti/GaTe/p-Si/Al SD have been calculated by the help of C–V measurements before and after each irradiations. The change in parameters was interpreted by the defect formation at the interface due to the electron irradiation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
