Some physical investigations of AgInS2−xSex thin film compounds obtained from AgInS2 annealed in seleneide atmosphere

Abstract

This work deals with the preparation of AgInS2−xSex from AgInS2 (AIS) sprayed thin films which treated under seleneide atmosphere during 1h at various temperatures (400, 450 and 500°C). Previously elaborated AgInS2 compound, which has been conceived as an absorber layer in the SnO2:F/AgInS2 (p)/Al Schottky diode, has presented some generation–recombination deficiencies and tunneling effects. XRD analysis shows the incorporation of Se element in the AgInS2 matrix especially for use of 450°C as heat temperature. The optical band gap calculated from transmittance and reflectance spectra of the above samples show the effect of annealed temperature on the band gap energy. The refractive index and extinction coefficient of the differently sample of AgInS2−xSex thin films have been reached through their transmission and reflectance spectra on a wide range of wavelengths. The surface topography and the roughness parameters of AgInS2−xSex thin films had been studied by AFM. Finally, thermal conductivity was determinate by the mirage effect. This thermal property was decreased by the annealed temperatures.