Abstract
An effective procedure considering the velocity overshoot effect in numerical simulation of GaAs MESFETs is presented. The results of the corresponding routine SEMICO II are compared with results of Monte-Carlo simulations and with results of the routine SEMICO I without overshoot. Implanted MESFETs have been simulated with and without including the overshoot effect, and from these data equivalent circuits have been derived. From circuit calculations of E/D inverter ring oscillators it is concluded that the velocity overshoot effect leads to a twofold decrease of the gate propagation delay time for 0.25 μm gate length.
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