Abstract
Set voltage is a key parameter for the application of Resistance Random Access Memory (RRAM). In this paper, based on TiN/AlOx/Pt RRAM synthesized by the magnetron sputtering method, we have studied the influence of I-V cycling at high temperatures on resistive switching performance. The results show that the treatment can significantly reduce the set voltage in resistive switching cycles. Moreover, the treatment can also enhance endurance effectively. Further studies indicated that a higher compliance current in treatment can induce a smaller and more uniform set voltage. We ascribe the improvements in resistive switching performance to the generation and accumulation of oxygen vacancies in the treatment. This research provides new ideas for synthesizing RRAM devices with low power consumption.
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