Abstract

The authors have improved the SPICE BSIMSOI model to account for velocity overshoot (VO) effects in single gate SOI MOSFETs. A new velocity overshoot parameter (/spl lambda//sub VO/) and an extraction method was introduced to obtain it that can be incorporated to the standard parameter extraction procedure of the BSIMSOI model. The transconductance curves needed to perform the extraction process have been obtained by means of an ensemble Monte Carlo simulator. A 51 stage oscillator ring and the influence of VO effects on the oscillation frequency have been studied. It has been shown that the oscillation frequency rises as VO effects increases, a quantitative relationship has been depicted.

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