Abstract
Velocity overshoot is one of the most important new effects observed in very short channel metal oxide semiconductor field effect transistors (MOSFETs), as this is directly related to the increase in current drive and transconductance experimentally observed. Comprehensive study of velocity overshoot effects in double gate MOSFETs were performed. A Monte Carlo simulator coupled with a self-consistent Poisson-Schroedinger solver was used to calculate velocity overshoot effects, low field mobilities, average conduction effective mass, and wavefunction overlapping. It is shown that higher velocity overshoot effects are obtained at lower inversion charges and smaller silicon layer thicknesses.
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