Modeling of Double-Gate MOSFETs

Abstract

The invention of metal oxide semiconductor field effect transistor (MOSFET) led to the electronics revolution of the 1970s and 1980s, in which the microprocessor made possible powerful desktop computers, laptops, sophisticated handheld calculators, iPods, and other electronic systems. The double-gate MOSFETs (DG-MOSFETs) are being considered as the most attractive candidate for the 10–50 nm gate length regime. Fully depleted structures with a thin Si body, such as ultra-thin-body, and multiple-gate MOSFETs have been the subject of intensive research. The major leakage components in DG-MOSFETs are subthreshold leakage current, gate leakage current, and band-to-band tunnel leakage. The threshold voltage of the DG-MOSFETs can be properly set by using work function engineering, which enables the device designers to maintain device performance in terms of drive current and reduced short-channel effects. Due to lower doping in the channel, the electric field across the oxide is lower in DG-MOSFETs compared to conventional single-gate MOSFETs.