Abstract

Low-power analog-to-digital converter (ADC) is a crucial part of wearable or implantable bioelectronics. In order to reduce the power of successive-approximation-register (SAR) ADC, an improved energy-efficient capacitor switching scheme of SAR ADC is proposed for implantable bioelectronic applications. With sequence initialization, novel logic control, and capacitive subconversion, 97.6% switching energy is reduced compared to the traditional structure. Moreover, thanks to the top-plate sampling and capacitive subconversion, 87% input-capacitance reduction can be achieved over the conventional structure. A 10-bit SAR ADC with this proposed switching scheme is realized in 65 nm CMOS. With 1.514 KHz differential sinusoidal input signals sampled at 50 KS/s, the ADC achieves an SNDR of 61.4 dB and only consumes power of 450 nW. The area of this SAR ADC IP core is only 136 μm × 176 μm, making it also area-efficient and very suitable for biomedical electronics application.

Highlights

  • With the feature size of integrated circuits downscaled to nanoscale, the integration level of System-on-Chip (SoC: System-on-Chip) has been increased dramatically

  • For some special applications, such as battery-powered or wirelesspowered implantable bioelectronics, low-power consumption and miniaturized size have become the key factors of the system

  • To verify the applicability of this proposed scheme, a 10-bit 50 KS/s SAR analog-to-digital converter (ADC) that can be used in multichannel neural recording implant is realized in 65 nm CMOS

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Summary

Introduction

With the feature size of integrated circuits downscaled to nanoscale, the integration level of System-on-Chip (SoC: System-on-Chip) has been increased dramatically. An improved energy-efficient capacitor switching procedure for charge scaling SAR ADC is proposed. For power-efficiency, area reduction, and easy realization in CMOS process, two 1-bit capacitor arrays are combined to generate the last 2 bits. This innovation comes from the attenuation capacitor based dual-array charge scaling structure [7], in which the attenuation capacitor would be an integral multiple of unit capacitor, 2C, only when the LSB array just converts 1 bit [8]. To verify the applicability of this proposed scheme, a 10-bit 50 KS/s SAR ADC that can be used in multichannel neural recording implant is realized in 65 nm CMOS.

Proposed Switching Procedure
Switching Energy Analysis
Findings
Conclusion
Full Text
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