We have grown AlSb and ALAsxSb1-x epitaxial layers by metalorganic chemical vapor deposition (MOCVD) using trimethylamine or ethyldimethylamine alane, triethylantimony, and arsine. These layers were successfully doped p- or n-type using diethylzinc or tetraethyltin, respectively. We examined the growth of AlAsxSb1-x using temperatures of 500 to 600‡C, pressures of 65 to 630 Torr, V/III ratios of 1-17, and growth rates of 0.3 to 2.7 Μm/h in a horizontal quartz reactor. We have also grown gain-guided, injection lasers using AlAsSb for optical confinement and a strained InAsSb/lnAs multi-quantum well active region using MOCVD. The semi-metal properties of a p-GaAsSb/n-InAs heterojunction are utilized as a source for injection of electrons into the active region of the laser. In pulsed mode, the laser operated up to 210K with an emission wavelength of 3.8-3.9 Μm. The dependence of active region composition on wavelength was determined. We also report on the two-color emission of a light-emitting diode with two different active regions to demonstrate multi-stage operation of these devices.