Abstract
We report on the chemical beam epitaxy growth conditions of high-quality Ga 1-x Al x As (x:0.2-0.6) and tensile-strained GaAs 1-y P y quantum wells (y: 0.05-0.29) on GaAs(0 0 1) surfaces using trimethylamine alane and alternative precursors of group V elements (tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP)). Cracking conditions of TBAs and TBP have been improved in order to reduce the carbon incorporation. Low levels of carbon and oxygen were detected by SIMS analysis of AlGaAs layers, independent of the aluminum concentration used ([O] ≃ 6-8 x 10 17 cm -3 , [C] ≃ 4-5 x 10 17 cm -3 ). GaAsP quantum wells have been grown exhibiting high luminescence efficiency and full-width at half-maximum of 10 meV for 30 A thick quantum well. The QW photoluminescence of E1-HH1, E1-LH1 energy transitions as a function of P mole fraction is well accounted for by envelope function calculations including strain effects. Preliminar results concerning laser diodes are discussed in the light of laser structure designs.
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