Abstract
We have grown AlSb and AlAs x Sb 1 − x epitaxial layers by metal-organic chemical vapor deposition (MOCVD) using trimethylamine alane or ethyldimethylamine alane, triethylantimony, and arsine. These layers were successfully doped por n-type using diethylzinc or tetraethyltin, respectively. We examined the growth of AlAs x Sb 1 − x using temperatures of 500–600°C, pressures of 65–630 Torr, V III ratios of 1–17, and growth rates of 0.3–2.7 μm/h in a horizontal quartz reactor. We have also fabricated gain-guided, injection lasers using AlAs x Sb 1 − x for optical confinement and a strained InAsSb InAs multi-quantum well active region grown using MOCVD. In pulsed mode, the laser operated up to 210 K with an emission wavelength of 3.8–3.9 μm.
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