In the present work, Titanium nitride (TiN)150 nm, Titanium on Titanium nitride (TiN75 nm/Ti75 nm), Titanium on Titanium carbonitride (TiCN75 nm/Ti75 nm), and Titanium on Titanium carbide (TiC75 nm/Ti75 nm) films were deposited on Si (100), quartz, and glass substrates through dc-magnetron sputtering. Vacuum annelation was carried at 600ºC for 1 hr to form TiN (m-TiN), Ti-rich TiN (b-TiN), Ti-rich TiC (b-TiC) and Ti-rich TiCN (b-TiCN) films. b-TiCN showed less optical absorbance and band gap compared to b-TiN and b-TiC films and more detrimental types of defects, which might lead to the degradation of mechanical properties in b-TiCN film. The shifting of the Ti-N core orbital towards higher binding energy showed the higher bond strength of the b-TiN film. The ITA/ITO ratio increased from 0.8 to 2.37 for b-TiC to b-TiN films, signifying the deterioration in medium-range order. The defect parameter, ID/IG, increased from 0.63 to 0.71, indicating that b-TiCN has higher defects than b-TiC films. The valence band spectra revealed that b-TiN and b-TiC valence bands are present above the Fermi level but below in the case of b-TiCN films. X-ray absorption spectroscopy confirmed that the Ti L, N K, and C K-edge were observed at 462.38, 404.53, and 287.33 eV, respectively. The highest Young’s modulus and hardness were 97.43 and 18.47 GPa, respectively, measured by a Berkovich nanoindenter for b-TiN thin films.