Abstract
Hetero-epitaxial TiC thin films were deposited at 100°C on MgO(001) by DC reactive magnetron sputtering in a mixture of Ar and CH4. The 62nm thick films were analyzed for elemental composition and chemical bonding by Auger electron spectroscopy, X-ray photoelectron spectroscopy and micro-Raman spectroscopy. The crystallographic structure investigation by high resolution X-ray diffraction revealed that the films consist of two layers: an interface partially strained epilayer with high crystalline quality, and a relaxed layer, formed by columnar grains, maintaining the epitaxial relationship with the substrate.The films presented smooth surfaces (RMS roughness ~0.55nm), with circular equi-sized grains/crystallites, as observed by atomic force microscopy. The Hall measurements in Van der Pauw geometry revealed relatively high resistivity value ~620μΩcm, ascribed to electron scattering on interfaces, on grain boundaries and on different defects/dislocations.
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