TiC Thin Films Research Articles

A new low Temperature Chemical Vapor Deposition Technique for Growing Thin Films of Ti, TiN on Copper and TiO2, TixSiyon Silicon

In this paper, we present a process which has the benefits of operating at lower temperatures than conventional CVD, that uses low cost precursors, and produces only environmentally benign byproducts. This new method for depositing Ti, TiN, TiO2, and Ti.Siy thin films has been demonstrated using a coflow diffusion reactor to react Na metal vapor with TiCl4as described by the following equation: 4Na(g) + TiCl4(g)---Ar---> Ti(s) + 4NaCl(g). In this reaction, sodium strips chlorine from titanium tetrachloride freeing titanium metal to grow into a thin film on a substrate placed in the reaction zone. TiN and TiO2films were produced by the introduction of N2gas or O2gas into the reactor, respectively. Using this reaction chemistry, we have produced Ti and TiN thin films on Cu substrates at 610 °C (considerably lower than the 900 °C to 1200 °C required for conventional thermal CVD of titanium) and TiO2and titanium silicides (TixSiy) films on silicon substrates. Thermodynamics calculations indicated that this class of chemistry is generic and that a wide range of metals and ceramics could be grown; and preliminary experiments do suggest that TiC and SiC thin films can be grown using this process. The thin films were primarily analyzed by scanning electron microscopy (SEM), energy dispersive spectrometry (EDS), and Raman pectroscopy.

On the nanocrystalline structure of TiC and TiB2 produced by laser ablation

Abstract Thin films of TiC and TiB2 have been deposited on silicon substrate by pulsed laser deposition technique, under substrate temperatures 25–600 °C. Transmission electron microscopy revealed the nanocrystalline structure of the coatings. The grain size for the TiC film was between 10 and 70 nm and for the TiB2 film was between 10 and 50 nm.

Structure and Properties of TiC, VC and TiC/VC Thin Films Deposited by Pulsed Laser Deposition

ABSTRACTA study has been conducted on the mechanical, tribological and chemical properties of pulsed laser deposited (PLD) TiC, VC and TiCNC thin films. The TiC films were deposited at 375°C and 5 mTorr Ar, while the TiCNC films were deposited from a composite target at 475°C at pressures of base vacuum and 50 mTorr Ar. XRD analysis revealed the films had the expected B1 structure, although XPS analysis showed a significant oxygen content. Tribological studies were conducted using a ball-on-disk test, and the wear behavior depended on the surface condition and film composition. One TiCNC film exhibited little wear but caused significant ball wear, indicating mixed carbide films are promising candidates for wear-resistant coatings.

Solid State Interfacial Reactions Between Tic Thin Films and Ti3AI Substrates

ABSTRACTThe products and kinetics of solid state reactions between TiC and Ti3Al have been investigated using X-ray diffractometry (XRD) and Auger electron spectroscopy (AES) with Ar ion beam sputtering. Diffusion couples were prepared by sputtering TiC thin films onto polished Ti3AI substrates, and then isothermally annealed in vacuum in the temperature range of 800 to 1000°C for 0.25 to 2.25 hours. The thickness of the interfacial reaction layer was obtained from AES elemental concentration depth profiling, while the reaction products were identified from XRD spectra. In the TiC/Ti3Al system, the reaction product was primarily P(Ti3AlC) phase. The growth-rate of the reaction product was fitted to a parabolic growth law (dZ/dt = k1/Z) and the activation energy of the rate constant was about 36.16 kcal/mole. The reaction mechanism will be discussed on the basis of thermodynamical equilibrium in Ti-Al-C ternary system.

Ａｒ｀＋´イオンアシスト反応性蒸着法によるＴｉＣ薄膜の付着力

Ａｒ｀＋´イオンアシスト反応性蒸着法によるＴｉＣ薄膜の付着力

Alternate Titanium Source Compounds for CVD of Ti/TiC Coatings

ABSTRACTCVD experiments were conducted using (Me3SiCH2)4Ti, Bis(2,4-dimethylpentadienyl) titanium, Cl3TiMe, (Me3SiCH2TiCl3 to evaluate their potential as Ti precursor compounds. Only Me3SiCH2TiCl3 was suitable for atmospheric CVD applications. Uniform thin films of polycrystalline TiC were deposited using Me3SiCH2TiCl3 in an argon ambient between 700 °C and 800 °C. A mechanism involving initial loss of Me3SiCl to generate a titanium carbene intermediate is proposed. Thin films of TiC deposited on Si[111] were characterized using XRD and AES. Depth profile line shape analysis showed only TiC and elemental Si in the interfacial region. XRD indicates some titanium silicide is formed at 800 °C. In a hydrogen ambient, hydrogenolysis of the alkyl group occurs and very poor film growth results were obtained.

Synthesis of TiC via polymeric titanates: the preparation of fibres and thin films

Polymerization of titanium isopropoxide via its transesterification with o-xylene-α,α′-diacetate enables the formation of a polymeric titanate that can be thermally converted into carbon-deficient TiC after inert atmosphere pyrolysis at 800 °C. The physical and rheological properties of this polymeric titanate allow for the production of crystalline TiC fibres and thin films. The synthesis of this polymeric precursor and the structural transformations leading to the formation of TiC are discussed.

Growth of TiC thin films by pulsed laser evaporation

Thin films of TiC have been grown on Si (100) substrates by pulsed laser evaporation. Analysis by X-ray photoelectron spectroscopy and by Auger sputter depth profiles indicates that the films grown between RT and 500° C are stoichiometric TiC. Film/ substrate interdiffusion is observed at higher substrate temperatures.

X-ray determination of the thickness of thin films of TiC, TiN, Ti(N, C)

The paper deals with a possible application of X-ray diffraction methods in studying thin wear-resistant films of titanium carbides, nitrides and carbonitrides, deposited on hard metal substrates. Special emphasis is laid on the texture elimination when measuring the layer thickness. The results are compared with those of the metallographical method.

Titanium carbide thin films obtained by reactive magnetron sputtering

The deposition rate, composition and diffraction spectra of TiC thin films, obtained by magnetron sputtering in the CH4-pressure range from 0.5 × 10−2 to 9 × 10−2 Pa have been measured. Deposition rate measurements show that at low pressures (< 1.5 × 10−2Pa) the system operated under conditions such that pure Ti was sputtered. At pressures higher than 4 × 10−2 Pa a TiC layer covered the target (reactive conditions). In the intermediate case the target surface consisted of Ti and TiC. Study of the composition, diffraction spectra and crystal lattice constants of the films showed that continuous conversion occurred from pure Ti films to stoichiometric TiC films when the CH4-pressure was raised from 1.5 × 10−2 to 4 × 10−2 Pa.

Cutting performance and chemical characterization of TiC-coated carbide cutting tools

The adhesion of TiC thin films deposited by an r.f. sputter deposition process on complex carbide cutting tool materials was investigated. The chemical compositions of the film-substrate interface and of the substrate surface were determined and related to substrate preparation techniques before film deposition via ion scattering spectrometric techniques. Previous investigators noted the deleterious effect of cobalt on machining performance. We found that sputter etching prior to deposition resulted in cobalt depletion at the surface. This is the first time that the relationship between cobalt depletion and the adhesional characteristics and cutting performance of TiC-coated cutting tools has been reported. In this comparative study for substrate preparation we found that the cobalt-depleted surfaces exhibited significant adhesional characteristics for the deposited films with minimal spallation and significantly improved cutting performance.