Thin Processes Research Articles

Energy Yield Modeling of Perovskite–Silicon Tandem Photovoltaics: Degradation and Total Lifetime Energy Yield

This study investigates the impact of degradation in perovskite‐silicon tandem solar cells by means of energy yield (EY) modelling over the entire lifetime. First, we assess the impact on EY of degradation in the individual solar cell parameters of the perovskite top cell. Our analysis reveals that degradation in fill factor, due to a decline in perovskite top cell shunt resistance (RSh), has the most severe impact on the EY, emphasizing the imperative to rectify perovskite imperfections in thin film processing causing RSh decline. Second, we investigate implications of degradation in the perovskite top cell on the EY of current mismatched tandem solar cells. Third, we examine critical thresholds for the “acceptable degradation levels” in the perovskite top cell with regard to degradation in each solar cell parameter, assuming that the total loss in EY must be comparable to the degradation in state‐of‐the‐art silicon. Overall, our study highlights that degradation of the perovskite top cell needs to be assessed with care when extrapolating the impact on the lifetime EY of perovskite‐silicon tandem solar cells. The severity of degradation for different degradation mechanisms in a single junction perovskite solar cell cannot be translated one‐to‐one to tandem devices.

Influence of Deposition Parameters on the Plasmonic Properties of Gold Nanoantennas Fabricated by Focused Ion Beam Lithography.

The behavior of plasmonic antennas is influenced by a variety of factors, including their size, shape, and material. Even minor changes in the deposition parameters during the thin film preparation process may have a significant impact on the dielectric function of the film, and thus on the plasmonic properties of the resulting antenna. In this work, we deposited gold thin films with thicknesses of 20, 30, and 40 nm at various deposition rates using an ion-beam-assisted deposition. We evaluate their morphology and crystallography by atomic force microscopy, X-ray diffraction, and transmission electron microscopy. Next, we examined the ease of fabricating plasmonic antennas using focused-ion-beam lithography. Finally, we evaluate their plasmonic properties by electron energy loss spectroscopy measurements of individual antennas. Our results show that the optimal gold thin film for plasmonic antenna fabrication of a thickness of 20 and 30 nm should be deposited at the deposition rate of around 0.1 nm/s. The thicker 40 nm film should be deposited at a higher deposition rate like 0.3 nm/s.

Atomistic simulations of the thinning process of tantalum/copper heterostructure in wafer containing through silicon via

Through silicon via (TSV) interconnect structure plays an essential role in high-density 3-D integration. The tantalum (Ta)/copper (Cu) heterointerface is one of the significant interfaces in the wafer containing TSV. Molecular dynamics simulations are utilized to study the interface evolution and thinning mechanism of Ta/Cu heterostructure at different grinding depths during the thinning process. It is found that atomic diffusion, amorphization, phase transition, and micro-defects are typical characteristics of interfacial evolution, which become more pronounced at deeper grinding depths. The extrusion of the hard Ta layer on the soft Cu layer leads to an early appearance of interface defects, including dislocations and stacking faults. It is revealed that the large lattice mismatch of the constituent layers and obstruction of the heterointerface result in obvious stress concentration. The reduced tangential and normal forces at the interface are ascribed to atomic structure evolution and intrinsic properties of the heterostructure. Additionally, the heterointerface can hinder heat conduction between the Ta and Cu layers. These findings can provide valuable guidance for the manufacture of the wafer containing TSV.

A wafer-level characterization method of thin film transverse piezoelectric coefficient evaluation

Accurate measurement of the piezoelectric property of thin films is critical for thin film process development and device design optimization. In this paper, we proposed a wafer-level thin film characterization method that provides a non-destructive, single-side measurement solution for evaluating and in-process monitoring the transverse piezoelectric coefficient (e31,f). The e31,f of piezoelectric films was determined by measuring the deflection of circular electrode induced by the converse piezoelectric effect, with the electrodes fabricated on top of piezoelectric thin film on a silicon substrate. The constitutive equation of the unimorph plate reveals a quadratic dependence of top electrode deflection (δ) on the radius (r), which was subsequently utilized to calculate the e31,f while considering the electrode edge effect. Determined by non-constant variations of |δ/r2| from finite element method (FEM) simulation results, the electrode edge effect leads to the specification of electrode size and substrate thickness for evaluating piezoelectric coefficient. A comprehensive FEM simulation analysis of the influence of wafer size and electrode location on the accuracy of the proposed method demonstrated its reliability for wafer-level characterization. The e31,f measurement results of single-crystal (s-PZT) and polycrystalline PZT (p-PZT) exhibit good agreement between the proposed wafer-level method and the die-level cantilever method. These results demonstrated that the proposed single-side wafer-level method provides a reliable measurement technique for e31,f characterization of piezoelectric thin film.

(Invited) The Influence of the Magnetic Field on Ni Thin Film Electrodeposition as an Electrocatalytically Active Material for Hydrogen Evolution Reaction

Ni thin film were synthesized through the electrodeposition method from three different electrolytes. Furthermore, they were assessed as electrocatalyst for hydrogen evolution reaction (HER) in 1 M NaOH. Herein, various electrodeposition parameters such as pH of the electrolytes, deposition potential, temperature, and the influence of the magnetic field were measured. We made a comparison between the different morphologies and different characteristics depending on the thin film electrodeposition process parameters. Moreover, we have studied the wettability changes of material in dependence from to the composition of the electrolyte and the applied external magnetic field. The deposition process was accomplished by using chronoamperometry technique. The measuring scanning electron microscope, and X-Ray diffraction were used to characterize the surface morphology and the crystalline structures of the fabricated films.

Engineering Thin Films of Silicon Phthalocyanines for Organic Thin Film Transistors

Metal phthalocyanines (MPc) show great promise as semiconductors due to their exceptional optoelectronic properties, high thermal and photochemical stability, and ability to be easily synthesized and functionalized for specific applications. The metal/metalloid ion in the center of the MPc ring can significantly influence the electronic, optical, and magnetic properties of the compound, as well as its solubility and stability. The majority of MPc, such as copper phthalocyanine (CuPc) are used as hole-transport materials (p-type) in organic electronics. Silicon phthalocyanines (R2-SiPc) are emerging semiconductors which predominantly moves electrons and have led to high performance n-type organic thin-film transistors (OTFTs). Their low synthetic complexity paired with their versatile axial group facilitates the finetuning of their chemical properties, solution properties and processing characteristics without significantly affecting their frontier orbital levels or their absorption properties. The crystal engineering and film forming characteristics of R2-SiPc semiconductors can be tuned through appropriate axial group functionalization, therefore facilitating their integration into both OTFTs and OPVs by solution processing or vapor deposition.Our group has developed families of R2-SiPc and integrated them into OTFTs with an emphasis on thin film processing and engineering of the interfaces for improved device performance. We have established structure property relationships of the final device performance as a function of 1) R2-SiPc axial groups and peripheral groups, 2) surface chemistry and composition and 3) thin film deposition conditions. I will also be discussing our recent work using advanced film characterization such as polarized Raman microscopy and synchrotron based scanning transmission x-ray microscopy to evaluate the resulting films and optimize the OTFT performance. Figure 1

Electrochemical Weakening Material Strength for Accelerated Thinning of Silicon Carbide Substrates

This paper presents a novel approach to expedite the thinning of silicon carbide (SiC) substrates, a crucial step in enhancing material performance and extending chip longevity by reducing volume resistivity. The traditional methods of SiC substrate thinning, such as diamond wheel grinding and plasma etching, have inherent limitations, including the risk of wafer breakage and high processing costs. In response to these challenges, we propose an innovative technique involving the electrochemical etching attenuation of SiC strength, offering a cost-effective and efficient solution.In this study, we employed an electrochemical method to initially weaken the SiC substrate from the surface to a defined depth, followed by fine-tuning its thickness using a conventional diamond grinding wheel. Remarkably, our results demonstrate that SiC substrates subjected to electrochemical treatment exhibit well-structured lattices free from residual stresses. This novel approach not only reduces the risk of wafer breakage but also enhances the material's integrity (Figure 1).To gain deeper insights into the effects of electrochemistry on SiC material strength, advanced characterization techniques, including scanning electron microscopy, were employed. Our findings reveal that the electrochemically treated SiC surface exhibits a sponge-like morphology, with a cross-sectional profile showcasing prominent columnar structures (Figure 2). This sponge-like structure is attributed to the removal of silicon atoms during anodization, affirming the effectiveness of electrochemical methods in rapidly attenuating the material strength of SiC substrates, thereby facilitating their efficient thinning through grinding without compromising substrate integrity.In summary, this research highlights the potential of electrochemical methodologies for the initial weakening of SiC substrates, leading to accelerated and cost-effective thinning processes. This breakthrough not only expedites SiC substrate thinning but also contributes significantly to the advancement of SiC substrate thinning and grinding techniques, promising substantial benefits for future semiconductor device fabrication. Figure 1

Study of Prefabricated Crack Propagation on Monocrystalline Silicon Surfaces for Grinding Damage Analysis.

Crack generation and propagation are critical aspects of grinding processes for hard and brittle materials. Despite extensive research, the impact of residual cracks from coarse grinding on the cracks generated during fine grinding remains unexplored. This study aims to bridge this gap by examining the propagation law of existing cracks under indentation using the extended finite element method. The results reveal that prefabricated cracks with depths less than the crack depth produced on an undamaged surface tend to extend further without surpassing the latter. Conversely, deeper prefabricated cracks do not exhibit significant expansion. A novel method combining indentation and prefabricated cracks with fracture strength tests is proposed to determine crack propagation. Silicon wafers with varying damaged surfaces are analyzed, and changes in fracture strength, measured by the ball-on-ring method, are utilized to determine crack propagation. The experimental results confirm the proposed crack evolution law, validated by damage assessments across different grinding processes, which is suitable for crack damage. The findings demonstrate that residual cracks from coarse grinding are negligible in predicting the maximum crack depth during fine grinding. This research provides a crucial foundation for optimizing the wafer thinning process in 3D stacked chip manufacturing, establishing that changes in fracture strength are a reliable indicator of crack propagation feasibility.

New method for rapid detection and simultaneous determination of prohibited adrenergic drugs in sports using thin layer chromatography and image processing

This study presents a new method for simultaneous determination of fenoterol, procaterol, clenbuterol, terbutaline and isoprenaline drugs using thin-layer chromatography assisted by image analysis (HPTLC-IA) combined with sensitive detection modes. Separation of the selected drugs was obtained using HPTLC Silica gel 60 F254 plates and mixture of isopropyl alcohol, ethyl acetate and ammonia (20:25:1.5 v/v/v) as mobile phase. UV detection mode combined with the use of 2,2-diphenyl-1-picrylhydrazyl (DPPH•) and 2,2'-azino-bis (3-ethylbenzothiazoline)-6-sulfonic acid (ABTS+•) radicals were applied for the first time for sensible detection of the separated drugs. Grey, green, red and blue scales respectively were selected for image analysis and accurate quantification of spot area. According to the obtained result, the use of DPPH• and ABTS+• reagents revealed a higher sensitivity in detection and accurate quantification of the analyzed drugs. Lower limit of detection (LOD = 0.07 ± 0.03 µg/spot; 0.09 ± 0.03 µg/spot and 0.10 ± 0.04 µg/spot) was obtained for fenoterol, procaterol and terbutaline using the ABTS+• radical and red scale selection for image processing. With the exception of isoprenaline, the proposed HPTLC-IA method showed a good separation of fenoterol, procaterol, clenbuterol and terbutaline drugs from other compounds in urine samples. Good recovery was obtained for these drugs in spiked urine samples.

Ventricular-subventricular zone stem cell niche adaptations in a mouse model of post-infectious hydrocephalus.

Congenital post-infectious hydrocephalus (PIH) is a condition characterized by enlargement of the ventricular system, consequently imposing a burden on the associated stem cell niche, the ventricular-subventricular zone (V-SVZ). To investigate how the V-SVZ adapts in PIH, we developed a mouse model of influenza virus-induced PIH based on direct intracerebroventricular injection of mouse-adapted influenza virus at two distinct time points: embryonic day 16 (E16), when stem cells line the ventricle, and postnatal day 4 (P4), when an ependymal monolayer covers the ventricle surface and stem cells retain only a thin ventricle-contacting process. Global hydrocephalus with associated regions of astrogliosis along the lateral ventricle was found in 82% of the mice infected at P4. Increased ependymogenesis was observed at gliotic borders and throughout areas exhibiting intact ependyma based on tracking of newly divided cells. Additionally, in areas of intact ependyma, stem cell numbers were reduced; however, we found no significant reduction in new neurons reaching the olfactory bulb following onset of ventriculomegaly. At P4, injection of only the non-infectious viral component neuraminidase resulted in limited, region-specific ventriculomegaly due to absence of cell-to-cell transmission. In contrast, at E16 intracerebroventricular injection of influenza virus resulted in death at birth due to hypoxia and multiorgan hemorrhage, suggesting an age-dependent advantage in neonates, while the viral component neuraminidase resulted in minimal, or no, ventriculomegaly. In summary, we tracked acute adaptations of the V-SVZ stem cell niche following onset of ventriculomegaly and describe developmental changes that help mitigate the severity of congenital PIH.

The Negative Binomial INAR(1) Process under Different Thinning Processes: Can We Separate between the Different Models?

The Negative Binomial INAR(1) Process under Different Thinning Processes: Can We Separate between the Different Models?

Beyond Structural Stabilization of Highly‐Textured AlN Thin Films: The Role of Chemical Effects

AbstractThe crystalline quality and degree of c‐axis orientation of hexagonal AlN thin films correlate directly with their functional properties. Therefore, achieving AlN thin films of high crystalline quality and texture is of extraordinary importance for many applications, but particularly in electronic devices. This systematic study reveals, that the growth of c‐axis‐orientated AlN thin films can be governed by a chemical stabilization effect in addition to the conventionally known structural, strain‐induced, stabilization mechanism. The promotion of in‐plane growth of AlN grains with c‐axis out‐of‐plane orientation is demonstrated on Y, W, or Al seed layers with different thicknesses and crystallinity preliminary exposed to N2 at room temperature. It is established that the stabilization mechanism is chemical in nature: the formation of an N‐rich surface layer on the metal seed layers upon exposure to N2 pre‐determines the polarity of AlN islands at the initial stages of thin film growth while the low energy barrier for the subsequent coalescence of islands of the same polarity contributes to grain growth. These results suggest that the growth of c‐axis oriented AlN thin films can be optimized and controlled chemically, thus opening more pathways for energy‐efficient and controllable AlN thin film growth processes.

High efficiency laser ablation of gold thin film by 2.8 GHz intraburst repetition rate pulses

This work initially presents our progress in developing a 14 W all-polarization-maintaining (PM) Yb-doped fiber laser system. This system can generate bursts with a 2.8 GHz intra-burst repetition rate and offers flexibility in burst repetition rates, starting from 100 kHz. The laser produces pulse energies up to 210 nJ, which can be dechirped to approximately 650 fs. Subsequently, we utilized the developed laser in thin film gold processing. We sent up to 6.4 W and employed three different intraburst pulse configurations on a 100 nm-thick gold film coated on glass. We achieved a record gold removal efficiency of 125 μg/W.s\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\upmu \ ext{g}/\ ext {W.s}$$\\end{document} using ∼\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\sim$$\\end{document}5 nJ pulses. Moreover, we determined an ablation pulse energy threshold of approximately 1 nJ, representing the lowest pulse energy to the best of our knowledge.

Exploring negative ion behaviors and their influence on properties of DC magnetron sputtered ITO films under varied power and pressure conditions

Abstract We deposited indium-tin-oxide (ITO) films on silicon and quartz substrates by magnetron sputtering technology in pure argon. Using electrostatic quadrupole plasma diagnostic technology, we investigate the effects of discharge power and discharge pressure on the ion flux and energy distribution function of incidence on the substrate surface, with special attention to the production of high-energy negative oxygen ions, and elucidate the mechanism behind its production. At the same time, the structure and properties of ITO films are systematically characterized to understand the potential effects of high energy oxygen ions on the growth of ITO films. Combining with the kinetic property analysis of sputtering damage mechanism of transparent conductive oxide (TCO) thin films, this study provides valuable physical understanding of optimization of TCO thin film deposition process.

Interpenetrating LiB/Li3BN2 phases enabling stable composite lithium metal anode

Host-less lithium metal anode generally suffers from large volume changes and serious dendrite growth during cycling, which poses challenges for its practical application. Interpenetrating phase composites with continuous architectures offer a solution to enhance mechanical properties of materials. Herein, a robust composite Li anode (LBN) material is fabricated through the metallurgical reaction between Li and hexagonal boron nitride (h-BN) with the formation of interpenetrating LiB/Li3BN2 phases. As LiB fibers are anchored by Li3BN2 granules, the collapse and slippage of LiB fibers are suppressed whilst the mechanical strength and structural stability of LBN are reinforced. By rolling, ultrathin (15 μm), freestanding, and electrochemically stable LBN foil can be obtained. The LBN anode exhibits a high average Coulombic efficiency of 99.69% (1 mA cm−2, 3 mAh cm−2) and a long lifespan of 2500 h (1 mA cm−2, 1 mAh cm−2). Notably, the LiCoO2 (with double-sided load 40 mg cm−2)|LBN pouch cell can operate over 450 cycles with a capacity retention of 90.1%. The exceptional cycling stability of LBN can be ascribed to the interpenetrating reinforcement architectures and synergistic electronic/ionic conductivity of the LiB/Li3BN2 dual-lithiophilic-phases. This work provides a new methodology for thin Li strip processing and reinforced-architecture design, with implications beyond battery applications.

Effects of Rapid Heat Treatments on the Properties of Cu2O Thin Films Deposited at Room Temperature Using an Ammonia-Free SILAR Technique

We report herein the analysis of the properties of copper(I) oxide thin films deposited by an optimized ammonium-free successive ion layer adsorption and reaction (SILAR) technique. The Cu2O thin film deposition process was carried out at room temperature using copper acetate monohydrate, sodium citrate as complexing agent, and hydrogen peroxide as precursors of copper and oxygen ions, respectively. The harmless and easy-to-handle sodium citrate replaces the volatile NH4OH commonly employed as complexing agent in the SILAR technique for the deposition of metal oxide thin films. The optical, structural, morphological, and electrical properties of the as-deposited Cu2O thin films were studied as a function of the number of cycles during deposition, as well as their modifications produced by the effect of rapid thermal annealing (RTA) in vacuum in a temperature range of 200–250°C for 1 min, 3 min, and 5 min. The as-deposited thin films had cubic crystalline structure corresponding to the Cu2O phase as determined by x-ray diffraction (XRD), with a direct energy bandgap of 2.43–2.51 eV depending on the number of cycles, and electrical resistivity of the order of 103 Ω cm. The XRD and x-ray photoelectron spectroscopy (XPS) analysis of the Cu2O thin films treated by RTA demonstrated an increase of the crystal size with time and temperature of the RTA and reduction effects from Cu2+ to Cu1+ oxidation states. On the other hand, the RTA treatments also decreased their energy bandgap to 2.38 eV and electrical resistivity to 102 Ω cm. The high energy bandgap values of the Cu2O thin films were attributed to quantum confinement effects produced by their small crystal size in the range of 3.6–8.6 nm.Graphical

Doped SnO2 thin films fabricated at low temperature by atomic layer deposition with a precise incorporation of niobium atoms

Nb-doped SnO2 (NTO) thin films were synthesized by atomic layer deposition technique at low temperature (100 °C). For an efficient incorporation of the Nb atoms, i.e. fine control of their amount and distribution, various supercycle ratios and precursor pulse sequences were explored. The thin film growth process studied by in-situ QCM revealed that the Nb incorporation is highly impacted by the surface nature as well as the amount of species available at the surface. This was confirmed by the actual concentration of the Nb atom incorporated inside the thin film as determined by XPS. Highly transparent thin films which transmit more than 95% of the AM1.5 global solar irradiance over a wide spectral range (300–1000 nm) were obtained. In addition, the Nb atoms influenced the optical band gap, conduction band, and valence band levels. While SnO2 thin film were too resistive, films tuned to conductive nature upon Nb incorporation with controlled concentration. Optimal incorporation level was found to be ⩽1 at.% of Nb, and carrier concentration reached up 2.5 × 1018 cm−3 for the as-deposited thin films. As a result, the high optical transparency accompanied with tuned electrical property of NTO thin films fabricated by ALD at low temperature paves the way for their integration into temperature-sensitive, nanostructured optoelectrical devices.

Three-Dimensional Ultrastructure of Flower-Spray Nerve Endings in the Rat Carotid Sinus.

The flower-spray nerve endings are afferent nerve terminals in the carotid sinus that arise from carotid sinus nerve of glossopharyngeal nerve. However, the three-dimensional ultrastructural characteristics of flower-spray nerve endings and spatial relationships between the terminal parts and other cellular elements have not been fully understood. To elucidate their detailed relationship, backscattered electron imaging of serial sections was performed with a scanning electron microscope to produce a three-dimensional reconstruction of the flower-spray endings. The terminal parts of flower-spray endings were distributed horizontally approximately 5µm outside the external elastic membrane in the tunica adventitia of the internal carotid artery. The three-dimensional reconstruction showed that the terminal parts of flower-spray endings were flat with irregular contours and were partially covered by the thin cytoplasmic processes of Schwann cells. The complex consisting of the nerve terminals and associated Schwann cells was surrounded by a multilayered basement membrane. The terminal parts of the endings were also surrounded by fibroblasts with elastic fibers and collagen fibrils. Secretory vesicles without an electron-dense core were observed in the terminal parts of the endings. The accumulation of vesicles just below the axonal membrane was observed in terminal parts not covered by Schwann cell cytoplasmic processes on both the luminal and basal sides. Swollen mitochondria, concentric membranous structures, and glycogen granule-like electron-dense materials were often noted in some of the terminal parts of the endings and the parent axon. Collectively, the present results suggest that flower-spray endings are baroreceptors because their morphology was similar to other mechanoreceptors. Furthermore, flower-spray endings may be affected by glutamate secreted in an autocrine manner.

The influence of sub-surface damage microstructure on ultra-thin die flexural strength

In the semiconductor industry, where miniaturization is a key driver, mechanical properties of ultra-thin dies are increasingly important research topics. Sub-surface damage (SSD) is a common issue in wafer thinning processes, but there is a lack of research on the relationship between SSD microstructure and ultra-thin die strength. In this study, the influence of SSD microstructure on flexural strength was investigated through three-point bending tests of ultra-thin dies prepared by distinct wafer-thinning methods, coupled with SSD microstructure characterization. Flexural strength was highest for dies dry polished with N pad, intermediate for dies dry polished with M pad, and lowest for dies with fine grinding. We researched SSD microstructure by high-resolution transmitted electron microscope (HRTEM), revealing that it comprises amorphous regions, micro-cracks, and high-density distortion areas. The SSD of the fine grinding samples was thick and intermittent, with observable micro-cracks. Comparatively, the SSD structure from M pad polishing was uniform but thicker, whereas SSD from N pad polishing was thinner but exhibited greater variability. SSD thickness not only influences the average value but also dictates the distribution of flexural strength. This research enhances the understanding of SSD microstructure's impact on ultra-thin die flexural strength, providing valuable insights for optimizing wafer thinning processes to enhance die reliability.

Automated Destination Renewal Process for Location-Based Robot Errands

In this paper, we propose a new approach for service robots to perform delivery tasks in indoor environments, including map-building and the automatic renewal of destinations for navigation. The first step involves converting the available floor plan (i.e., CAD drawing) of a new space into a grid map that the robot can navigate. The system then segments the space in the map and generates movable initial nodes through a generalized Voronoi graph (GVG) thinning process. As the second step, we perform room segmentation from the grid map of the indoor environment and classify each space. Next, when the delivery object is recognized while searching the set space using the laser and RGB-D sensor, the system automatically updates itself to a position that makes it easier to grab objects, taking into consideration geometric relationships with surrounding obstacles. Also, the system supports the robot to autonomously explore the space where the user’s errand can be performed by hierarchically linking recognized objects and spatial information. Experiments related to map generation, estimating space from the recognized objects, and destination node updates were conducted from CAD drawings of buildings with actual multiple floors and rooms, and the performance of each stage of the process was evaluated. From the quantitative evaluation of each stage, the proposed system confirmed the potential of partial automation in performing location-based robot services.