Temperature Dependence Of Resistivity Research Articles

Strong influence of magnetic field and non-uniform stress on elastic modulus and transition temperatures of twinned Ni–Fe(Co)–Ga alloy

The magnetization value and electric resistivity of the single-crystalline sample of Ni50Fe19Co4Ga27 shape memory alloy were measured. The elastic modulus was determined by the Dynamic Mechanical Analysis (DMA). The characteristic temperatures of martensitic transformation (MT) of the alloy were estimated from the temperature dependences of magnetization, electric resistivity and elastic modulus. A significant disparity between MT temperatures resulting from DMA and those estimated from magnetic and resistivity measurements was discovered. It was argued that the discrepancy is caused by the non-uniform mechanical stressing of twinned single crystal by the DMA analyzer. Moreover, the DMA measurements revealed a significant decrease of the elastic modulus of twinned martensite under the applied magnetic field of 1.5 kOe. To explain this effect, the temperature-dependent Young’s modulus of twinned crystal lattice was computed. The computations showed that the experimentally observed field-induced change of the elastic modulus is caused by the stress-assisted detwinning of the crystal lattice by the applied magnetic field.

Tuning of thermoelectric performance by modulating vibrational properties in Ni-doped Sb2Te3.

Sb2Te3, a binary chalcogenide-based 3D topological insulator, attracts significant attention for its exceptional thermoelectric performance. We report the vibrational properties of magnetically doped Sb2Te3 thermoelectric material. Ni doping induces defect/disorder in the system and plays a positive role in engineering the thermoelectric properties through tuning the vibrational phonon modes. Synchrotron powder X-ray diffraction study confirms good crystalline quality and single-phase nature of the synthesized samples. The change in structural parameters, including Biso and strain, further corroborate with structural disorder. Detailed modification of phonon modes with doping and temperature variation is analysed from temperature-dependent Raman spectroscopic measurement. Compressive lattice strain is observed from the blue shift of Raman peaks owing to Ni incorporation in Sb site. An attempt is made to extract the lattice thermal conductivity from total thermal conductivity estimated through optothermal Raman studies. Hall concentration data support the change in temperature-dependent resistivity and thermopower. Remarkable increase in thermopower is observed after Ni doping. Simulation of the Pisarenko model, indicating the convergence of the valence band, explains the observed enhancement of thermopower in Sb2-xNixTe3. The energy gap between the light and heavy valence band at Γ point is found to be 30 meV (for Sb2Te3), which is reduced to 3 meV (in Sb1.98Ni0.02Te3). A significant increase in thermoelectric power factor is obtained from 715 μWm-1K-2 for pristine Sb2Te3 to 2415 μWm-1K-2 for Ni-doped Sb2Te3 sample. Finally, the thermoelectric figure of merit, ZT is found to increase by four times in Sb1.98Ni0.02Te3 than that of its pristine counterpart.

Interfacial thermal resistance between mechanically exfoliated nm-thick MoS2 and silicon from −60 °C to 50 °C based on ns-ET Raman technique

In the miniaturization and integration development of micro-devices, the large thermal contact resistance significantly affects the overall performance of micro-devices, which is influenced by both interfacial contact condition and material properties. However, the temperature dependence of interfacial thermal resistance of realistic materials remains unclear. In this work, the interfacial thermal resistance between nm-thick MoS2 nanosheets and Si substrate is measured by using the ns energy transport state-resolved Raman (ns ET-Raman) technique. By comparing the experimental data with finite difference numerical simulation, the real value of the interfacial thermal resistance is determined. By changing the ambient temperature from -60 °C to 50 °C, the interfacial thermal resistance against temperature curve is obtained. As the environmental temperature deviates from room temperature, a large increasement of the interfacial thermal resistance can be observed. As temperature goes back to room temperature, the unreversible interfacial thermal resistance indicates that the large thermal expansion mismatch deteriorates the contact situation. In the last, the interfacial thermal resistance evolution under varying environmental temperatures from both experiments and modeling results in literatures are compared and discussed to illustrate the effect of different interface formation methods. For epitaxial and CVD grown materials, the interfacial thermal resistance generally reduces with raising ambient temperature. While for mechanically exfoliated samples, the effect of thermal expansion mismatch and the resulting gaps dominate the interfacial thermal resistance, which leads to non-monotonous temperature dependency with a valley located at room temperature.

Peculiarities of magnetoresistance in GaAs whiskers at low temperatures

Magnetoresistance of GaAs whiskers with concentrations in the vicinity to metal-insulator transition (MIT) 1017–1018 cm−3 were studied at low temperatures and high magnetic fields (up to 14 T). The whiskers were doped with Te during the growth. The whisker diameter ranges from 10 to 40 μm. Temperature dependence of the whisker resistance have shown metallic and semiconductor character in the proximity to MIT from various sides of the transition. Depending on doping level the character of the whisker magnetoresistance changes from linear positive to quadratic negative. The magnetoresistance of metallic whiskers is explained in terms of weak antilocalization (WAL) model. The specimens with semiconductor character of conductance revealed negative magnetoresistance, magnitude of which rises due to moving away from MIT and reach 15% for the whiskers with concentration 1017 cm−3. The possible reasons of the negative magnetoresistance are discussed. The effect observed is attributed to weak localization (WL) of charge carriers in the region of hopping conductance for the whiskers in the vicinity to MIT. A high negative magnetoresistance (NMR) for the whiskers of low dopant concentration is connected with subsurface conductance in the disordered upper layers of the whiskers due to their core-shell structure.

Assessment of superconducting and structural stability of advanced Y-123 and Y-358 ceramics with Tb/Y substitution in main matrices

In this study, the performances of Y1-x(Tb)xBa2Cu3O7-δ (Y-123) and Y3-x(Tb)xBa5Cu8O18-δ (Y-358) advanced ceramics prepared by sol-gel preparation route are investigated by the advanced characterization methods including X-ray diffraction (XRD), temperature dependent resistivity (ρ-T), vibrating sample magnetometry (VSM), scanning electron microscopy (SEM) and energy distribution spectroscopy (EDS) measurements and theoretical approaches. The EDS results illustrated that the Tb impurities were replaced successfully by the yttrium sites in the YBa2Cu3O7-y main matrix. Similarly, it was noted that the presence of excess impurities in the crystal structure led to the oxygenation problems. Electrical properties were determined by temperature dependent resistivity (ρ-T) measurements. ρ-T results indicated that Tb doping reduced the critical transition temperature (Tc) values for the transition to superconductivity for all samples in two YBCO phases. Although it appears to have negative effects of Tb ions on the number of mobile charge carrier concentrations in the σ antibonding in-plane Cu-O bonds, bipolaron formations in the polarizable lattices, oxidation states, and amplitude of the pair wave function of both phases, the other valuable properties (morphology, crystallinity quality, interaction between adjacent layers, critical current density, and flux pinning ability) were noted to improve remarkably in the case of the optimum amount in the Y-123 superconducting phase. In this context, the Y-358 superconducting phase was harshly affected by the substitution due to the change of the ortorombicity, localization problem, impurity phases, structure stabilization, crystal structure quality, crystallization system, homogeneities of oxidation states, oxygen ordering degree, and impurity scatterings. Besides, the analysis of the fluctuation induced conductivity indicated that the Y-123 ceramics with longer c-axis coherence length and less anisotropic nature exhibited well superconducting properties. Additionally, the doping ratio of x=0.01 led to the formation and distribution of more nucleation centers for the thermal fluxon motions of 2D pancake vortices. Similarly, the optimum Tb doped Y-123 system exhibited much durable to applied field strengths due to the best interaction quality between grains. Accordingly, this study recommended that the Y1-x(Tb)xBa2Cu3O7-δ advanced ceramic structure with new functionalities can find much more application areas in innovative, heavy-industrial technologies, and advanced engineering-related sectors.

The evolution of anomalous Hall effect in ferromagnetic Weyl semimetal Nb x Zr1-x Co2Sn

Abstract Magnetic topological semimetal can host various topological non-trivial states leading to exotic novel transport properties. Here we report the systematic magneto-transport studies on the Heusler alloy Nb x Zr1-x Co2Sn considered as a ferromagnetic(FM) Weyl semimetal. The cusp anomaly of temperature-dependent resistivity and large isotropic negative MR emerge around the FM transition consistent with the theoretical half-metallic predictions. The prominent anomalous Hall effect(AHE) has the same behavior with the applied field along various crystal directions. The Nb doping introduces more disorder resulting in the enhancement of the upturn for the temperature-dependent resistivity in low temperatures. With Nb doping, the AHE exhibits systemic evolution with the Fermi level lifted. At the doping level of x=0.25, the AHE mainly originates from the intrinsic contribution related to non-trivial topological Weyl states.

Temperature Evolution of Composition, Thermal, Electrical and Magnetic Properties of Ti3C2Tx-MXene.

MXenes are a family of two-dimensional nanomaterials. Titanium carbide MXene (Ti3C2Tx-MXene), reported in 2011, is the first inorganic compound reported among the MXene family. In the present work, we report on the study of the composition and various physical properties of Ti3C2Tx-MXene nanomaterial, as well as their temperature evolution, to consider MXenes for space applications. X-ray diffraction, thermal analysis and mass spectroscopy measurements confirmed the structure and terminating groups of the MXene surface, revealing a predominant single OH layer character. The temperature dependence of the specific heat shows a Debye-like character in the measured range of 2 K-300 K with a linear part below 10 K, characteristic of conduction electrons of metallic materials. The electron density of states (DOS) calculations for Ti3C2OH-MXene reveal a significant DOS value at the Fermi level, with a large slope, confirming its metallic character, which is consistent with the experimental findings. The temperature dependence of electrical resistivity of the MXene samples was tested for a wide temperature range (3 K-350 K) and shows a decrease on lowering temperature with an upturn at low temperatures, where negative magnetoresistance is observed. The magnetoresistance versus field is approximately linear and increases its magnitude with decreasing temperature. The magnetization curves are straight lines with temperature-independent positive slopes, indicating Pauli paramagnetism due to conduction electrons.

Influence of Lifshitz Transition on the Intrinsic Resistivity of Cu2N Monolayer.

The Lifshitz transition (LT), a topological structure transition of Fermi surfaces, can induce various intricate physical properties in metallic materials. In this study, through first-principles calculations, we explore the nontrivial effect of the LT on the intrinsic resistivity of the Cu2N monolayer arising from electron-phonon (el-ph) scattering. We find that when the LT is induced by electron doping, the multibranch Fermi surface simplifies into a single-band profile. Such an LT leads to a decoupling of low-frequency flexural phonons from el-ph scattering due to mirror symmetry. Consequently, the resistivity of the Cu2N monolayer at room temperature significantly decreases, approaching that of slightly doped graphene, and highlighting the Cu2N monolayer as a highly conductive two-dimensional metal. Moreover, this LT can bring about a nonlinear temperature dependence of the intrinsic resistivity at a high temperature.

Electrical resistivity and magnetoresistance of Sr3Fe2+xMo1–xO9–3x/2 (x = 0.45, 0.60, and 1.00) prepared by the solid-state reaction

In this paper, we focus on understanding the behavior of the temperature dependence of electrical resistivity (ρ) and magnetoresistance (MR) in Sr3Fe2+xMo1–xO9–3x/2 perovskites with x = 0.45, 0.60, and 1.00. Three polycrystalline materials were synthesized using conventional solid-state reaction techniques. Rietveld analysis of room-temperature X-ray diffraction data reveals that all three compositions crystallize in tetragonal symmetry; where x = 0.45 and 0.60 undergo an I4/mcm space group, while x = 1.00 adopts a P4/mmm space group. Electrical resistivity measurements carried out at magnetic fields (0 and 1 T) reveal the presence of a transition from the ferromagnetic phase to the paramagnetic phase in the vicinity of the TMI. The metal-insulator transition temperature (TMI) decreases with increasing Fe content and rises slightly with changing magnetic field from 0 to 1 T. The magnetoresistance (MR) of the SrFeO3–δ sample (x = 1.00) has a large value of about 63.6 %, indicating that it can be exploited for certain devices. A variety of theoretical models are used to study the behavior of electrical resistivity in various temperature ranges, showing excellent agreement with experimental results.

Magnetoresistance and magnetic field-induced phase transition in two-dimensional antiferromagnet Fe1/3NbS2

We perform systematic studies on the magnetic and magnetotransport properties of Fe1/3NbS2 single crystal. Results show that Fe1/3NbS2 is an antiferromagnet with strong perpendicular magnetocrystalline anisotropy even in the paramagnetic state. The Fe1/3NbS2 nanoplate exhibits exotic magnetotransport characteristics with variation of temperature and magnetic field in the vicinity of Néel temperature. The temperature dependence of resistivity indicates that the magnetic field has a substantial effect on the Néel order of Fe1/3NbS2, and an intermediate phase occurs before the sample enters into the antiferromagnetic state. It is the field- or temperature-induced antiferromagnetic–intermediate phase and intermediate phase–paramagnetic phase transitions that lead to the novel magnetotransport characteristics in the vicinity of Néel temperature. The findings in this work will promote future studies based on two-dimensional antiferromagnetic spintronics.

Magnetotransport and Shubnikov-de Haas oscillations in LaBi samples with different degrees of air exposure

A series of magnetotransport experiments has been designed to investigate single-crystalline LaBi samples subjected to different degrees of air exposure. As the air exposure time increases, the temperature-dependent resistance changes from the typical behaviour of a good metal to that of a bad metal, exhibiting a negative temperature coefficient. Additionally, the magnetoresistance in the sample with the longest air exposure becomes linear in the magnetic field, instead of the ubiquitous quadratic magnetoresistance observed in many other related rare-earth monopnictides. Despite these drastic changes, the Shubnikov-de Haas oscillations remain almost unaffected by air exposure – the frequency spectra and the effective masses do not vary as the air exposure time increases. Our results suggest the existence of two separate contributions to the transport data: one from the surface and the other from the bulk. Given the topological nature of LaBi, our results suggest controlled air exposure provides an effective means to distinguish between surface and bulk states.

Metallicity and associated ferromagnetism in fluorine doped LaMnAsO

The electrical and magnetic properties of the layered oxypnictide LaMnAsO have been investigated through fluorine doping at the oxygen site. LaMnAsO is well-established as an insulator and exhibits antiferromagnetic behavior below its Neel temperature, TN = 360 K. With F-doping, the electrical and magnetic characteristics undergo a transition from insulating antiferromagnetic states to semiconducting and then to metallic ferromagnetic states. With F-doping levels ranging from approximately x=0.15 to nearly its maximum at 0.25, the resistivity experiences a remarkable reduction by five orders of magnitude, reaching values of approximately 0.04 Ω cm at room temperature. Furthermore, the temperature-dependent resistivity profile demonstrates a decidedly metallic nature for the F-doping ranges of x=0.15 to 0.25. The transition temperatures (TC) exhibit a spread of approximately 20 K around 300 K. Notably, the transverse magnetoresistance (MR) is approximately 12% in the vicinity of the room temperature transition.

Source–drain contact impacts on electrical performances and low frequency noise of InZnO thin-film transistors down to 7 K

Source–drain contacts seriously affect low frequency noise (LFN) in amorphous IZO (a-IZO) thin-film transistors with bilayer ITO/Mo electrodes at cryogenic temperatures. In the range of 7–300 K, electrical and LFN performances of devices are measured, and the temperature dependence of channel resistances (Rch) and contact resistances (Rsd) is also analyzed. The carrier transport transition both occurs in a-IZO channels at 80 K and in ITO/Mo electrodes at 100 K, which causes the variation in Rsd and Rch. Below 80 K, the variable range hopping conduction dominates in the channels and contacts with Rsd/Rch ratio > 1. The LFN measured results indicate that the noise is contact-dominated. At higher temperatures above 120 K, the band conduction dominates in the channel, with Rsd/Rch ratio < 1, and the noise is channel-dominated. The main mechanism of noise transfers from the mobility fluctuation to the carrier number fluctuation. We consider that the contribution of contact noise to total LFN is determined by the Rsd/Rch ratio. This work provides comments for the selection of electrode materials in devices applied to cryogenic integration circuits.

Structural behavior and electrical transport properties of Mg2Ge under high pressure

The structural and electrical transport properties are investigated from ambient pressure to 40 GPa for Mg2Ge using first-principles calculations and in situ high-pressure electrical experiments. Mg2Ge undergoes reversible phase transitions from anti-fluorite structure to anti-cotunnite structure and then to Ni2In-type structure by enthalpy calculations, both reflected in the cell volume collapse and discontinuous axial ratios of lattice constants. The inter- and intra-layer sliding of Mg and Ge atomic pairs is revealed induced by phase transitions. The metallization transition is determined by the energy-band closure, in good agreement with the enhancing metallic behavior experimentally evidenced above approximately 7 GPa according to the temperature-dependent resistivity measurement. The structural phase transitions are determined at around 9.6 GPa and 35.8 GPa based on discontinuous electrical parameters. The paper tends to shed light on the structural behaviors and electrical transport properties of intermetallic compounds Mg2X-type (X = IVA group elements) family under extreme conditions.

Electronic and Structural Disorder of the Epitaxial La0.67Sr0.33MnO3 Surface.

Understanding and tuning epitaxial complex oxide films are crucial in controlling the behavior of devices and catalytic processes. Substrate-induced strain, doping, and layer growth are known to influence the electronic and magnetic properties of the bulk of the film. In this study, we demonstrate a clear distinction between the bulk and surface of thin films of La0.67Sr0.33MnO3 in terms of chemical composition, electronic disorder, and surface morphology. We use a combined experimental approach of X-ray-based characterization methods and scanning probe microscopy. Using X-ray diffraction and resonant X-ray reflectivity, we uncover surface nonstoichiometry in the strontium and lanthanum alongside an accumulation of oxygen vacancies. With scanning tunneling microscopy, we observed an electronic phase separation (EPS) on the surface related to this nonstoichiometry. The EPS is likely driving the temperature-dependent resistivity transition and is a cause of proposed mixed-phase ferromagnetic and paramagnetic states near room temperature in these thin films.

Evolution of ferrimagnetism against Griffiths singularity in calcium ruthenate

The magnetism in the correlated metal CaRuO3 is enigmatic as it is poised near a triple point among the ferromagnetic, antiferromagnetic, and paramagnetic ground states. Here we report a detailed work on structural, spectroscopic, magnetic, and transport properties in CaRu 1−x Cr x O3. We find that Cr doping reduces the orthorhombicity in CaRuO3. Surprisingly, a tiny (x = 0.01) amount of Cr-doping drives the magnetic ground state from ‘paramagnetic-like’ to ferrimagnetic. Slightly higher Cr-doping (x = 0.05) results formation of magnetic clusters which gives rise to Griffiths singularity and power law divergence in magnetic susceptibility. The magnetism in CaRu 1−x Cr x O3 is explained in terms of ‘seven atom’ ferrimagnetic clusters. Electrical transport shows a gradual evolution of a non-metallic state upon Cr-doping. In particular, for x ⩾ 0.1, the temperature-dependent resistivity follows Mott-VRH conduction. The XPS study also supports significant role of disorder and electron correlation which effectively reduces the itinerant character of electrons. Finally, a new T-x phase diagram is constructed depicting the evolution of electronic and magnetic state in CaRu 1−x Cr x O3.

Dielectric and Electrical Behavior of Apraseodymium Based Tungsten Bronze Ceramics

AbstractThe ceramic oxide Na2Ba2Pr2W2Ti4Nb4O30 (NBPWTN) is prepared by a mechanical mixed oxide route. The compound formation and the phase are concluded from the x‐ray diffraction pattern taken at room temperature (XRD). The uniform distribution of grains of various sizes with negligible voids is studied from scanning electron micrograph of the sample pellet. The presence of dielectric dispersion and ferroelectric phase in the material is observed from the temperature‐dependent dielectric parameters at selected frequencies. The existence of ferroelectricity in the material is further confirmed by the room temperature hysteresis loop. Impedance spectroscopic studies informed about the correlation between the microstructure and electrical behavior. The frequency variation of AC conductivity refers to Jonscher's law. The temperature variation of frequency exponent term n indicates OLPT (overlapping large polaron‐tunneling) model of the conduction mechanism in the sample. NBPWTN is a strong candidate for applications involving thermistor‐related devices because of the temperature dependency of resistance. The value of temperature sensitivity coefficient β in our investigation is achieved between 2000 and 11 000 K, confirming that the material has a high‐temperature stability property and is ideal for high‐temperature electronics applications. The high room temperature dielectric constant value of the ceramic (around 500) is useful for dielectric capacitor applications.

Design of Electrical Sheet Resistance of Thin Film Measurement System Based on GM Cryocooler in Cryogenic Temperature

The determination of the dependencies of the electrical resistivity of the thin film to temperature is of great importance both for understanding the conduction mechanism and for numerous technical applications of these films. In this work, to characterize, the electrical properties of thin films, a GM cryocooler-based automatic board temperature range electrical properties measurement system has been constructed. The system can measure multiple samples simultaneously. The cooling process was simulated using the time-discrete differencing to validate the optimized device design parameters and minimize heat losses. Furthermore, the temperature-dependent sheet resistance results were compared with the results from the physical property measurement system.

Evaluating SWCNT assembly properties from the temperature dependence of electrical resistivity

We developed a theoretical model to describe the electrical resistivity in films and fibers made of single-walled carbon nanotubes (SWCNTs). The proposed model considers the formation of randomly oriented bundles of metallic and semiconducting nanotubes and takes into account the influence of temperature, while separating contributions of SWCNTs and their junctions to the total resistivity. To verify the model, we applied a powerful experimental tool – measurements of the temperature dependence of electrical resistivity of the investigated macroscopic SWCNT assemblies (pristine and doped SWCNT fibers). This allowed us to estimate various parameters of the material, such as the average length of SWCNT bundles, the acoustic phonon scattering length, and the bundle contact resistance, which are difficult to evaluate experimentally for entangled SWCNTs. The study highlights the importance of understanding the relationship between structural characteristics and electrical properties in SWCNT assemblies. The findings provide insights into optimizing the conductivity of these materials and offer a quick estimation method of the SWCNT network properties based on varying temperature measurements for future fiber and film-based applications.

Enhanced structural, optical and electrical properties of polycrystalline WO3 thin films achieved by aluminum nanosheets coating

Herein the effects of aluminum nanosheets on the structural, morphological, optical and electrical properties of tungsten oxide thin films are reported. Polycrystalline phase of the thermally evaporated WO3 was achieved by the pulsed laser welding technique. The polycrystalline films are then coated with Al nanosheets of thicknesses of 100 nm and 150 nm by the ion coating technique. It is observed that Al induces the domination of the hexagonal structure of WO3 over the tetragonal. Associated with the enhanced crystallinity the light absorption in the films increased by more than 60% and the energy band gap narrowed significantly. Namely the energy band gap of the as grown WO3 decreased from 3.15 eV to 2.85 eV and 2.59 eV as the Al layer thickness increased from 100 to 150 nm, respectively. It is also observed that crystalline films of WO3 exhibited lower electrical resistivity compared to films fabricated by other techniques. The temperature dependent electrical resistivity measurement was carried out in the temperature range of 310–420 K. It showed room temperature values of 2.5 ( Ω cm), 2.2 ( Ω cm) and 1.9 ( Ω cm) and impurity levels centered at 0.25 eV, 0.34 eV and 0.16 eV for uncoated and films coated with Al nanosheets of thicknesses of 100 nm and 150 nm, respectively. The enhanced crystallinity that is accompanied with narrower energy band gap and lower electrical resistivity values make crystalline WO3 films promising for optoelectronic applications.