Abstract
The electrical and magnetic properties of the layered oxypnictide LaMnAsO have been investigated through fluorine doping at the oxygen site. LaMnAsO is well-established as an insulator and exhibits antiferromagnetic behavior below its Neel temperature, TN = 360 K. With F-doping, the electrical and magnetic characteristics undergo a transition from insulating antiferromagnetic states to semiconducting and then to metallic ferromagnetic states. With F-doping levels ranging from approximately x=0.15 to nearly its maximum at 0.25, the resistivity experiences a remarkable reduction by five orders of magnitude, reaching values of approximately 0.04 Ω cm at room temperature. Furthermore, the temperature-dependent resistivity profile demonstrates a decidedly metallic nature for the F-doping ranges of x=0.15 to 0.25. The transition temperatures (TC) exhibit a spread of approximately 20 K around 300 K. Notably, the transverse magnetoresistance (MR) is approximately 12% in the vicinity of the room temperature transition.
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