Abstract
Transverse and longitudinal magnetoresistance in InSb whiskers with different impurity concentration (4.4×1016–7.16×1017)сm−3 were studied at temperature range (4.2–77)K and in magnetic fields (0–14)T. Shubnikov-de Haas oscillations in magnetoresistance for n-type InSb whiskers with impurity concentration in the vicinity to the metal–insulator transition (MIT) at low temperature were revealed. Every peak of longitudinal and transverse magnetoresistance (MR) split as the doublet for concentration 3.26×1017сm−3. The giant g-factor was defined, that rises from 46 to 60 with increasing of the magnetic field up to 14T. The oscillation period differs in the range (0.095–0.11)T−1 at various doping concentration in InSb whiskers. The effective mass of electrons mс=0.03m0 and Dingle temperature with range (3–12)K were found in InSb whiskers with impurity concentration in the vicinity to MIT. The observed giant magnetoresistance (increasing in order of magnitude in magnetic field induction 14T) was used to design the sensitive sensor of magnetic field induction operated at the range of cryogenic temperatures.
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