Subthreshold Voltage Research Articles

Effects of illumination on the electrical characteristics in organic thin-film transistors based on dinaphtho [2,3-b:2′,3′-f] thieno[3,2-b] thiophene (DNTT): Experiment and modeling

The electrical properties of dinaphtho [2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) based organic thin film transistors (DNTT-TFTs) were investigated in detail under dark and various light illumination conditions with different channel lengths. We have exploited the experimental curves current–voltage of our TFT to extract electrical parameters such us mobility, threshold voltage, sub-threshold voltage and trapped density in dark and under illumination. By using an analytical model, we are able to reproduce very accurately the output and transfer characteristics with a joint analysis of the L = 100 µm and L = 500 µm electrical characteristics, the dependence of the contact resistance (Rc) upon the illumination conditions has been extracted. The used model gives a good agreement between the measured current–voltage characteristics of the DNTT-TFTs and those modeled in all measurement conditions (in dark and under illumination).

PVT-compensated low voltage LNA based on variable current source for low power applications

In this paper, a new compensation technique for the low noise amplifier (LNA) with the high capability and efficiency for low power applications is proposed. The supply voltage and bias of the LNA are near the sub-threshold voltage, which has excellent effect on reducing power consumption. At this voltage level, the gain decreases and the various circuit parameters become extremely sensitive to process, voltage and temperature (PVT) changes. To overcome the problem, a compensating circuit with variable current source to control the LNA bias voltage is used. The output of the compensator circuit is adjusted according to changes in temperature, voltage and five process corners, and produces a variable voltage. The temperature compensator consists of two current sources that produce a current proportional to temperature changes. Regarding process and voltage compensator, according to the state created in the circuit, the appropriate amount of current is injected through the output and finally stabilizes the main parameters of the LNA circuit. In LNA circuit, for proper performance at supply voltage near the sub-threshold and attaining the gain improvement, forward body bias and gm-boosting techniques are employed, respectively. The LNA circuit along with the PVT compensator at supply voltage of 0.35 V, consumes about 567 µW power consumption that here 91 µW is caused by the PVT compensator circuit. In the proposed circuit, the rate of noise figure (NF) and gain (S21) changes compared to temperature changes in the five corners have decreased by 4.3 and 12.1 times versus LNA with constant bias, respectively. In this case, with 20% changes of VDD, NF and S21 changes decreased by 23 and 11.35 times, respectively. The results are provided by Cadence software using 65 nm CMOS technology.

A robust and write bit-line free sub-threshold 12T-SRAM for ultra low power applications in 14 nm FinFET technology

In this paper, a robust 12T-SRAM memory cell at sub-threshold voltage is designed to reduce power consumption for low power applications, that in addition to reducing power consumption can perform well at high frequencies and remain stable. For the write operation, a new method has been used that removes the write bit line and uses the supply voltage in each cell for this operation and only by applying control signals. Also, the embedded bit line is used only for read operations and reduces the activity of the bit line, and due to being floating and the way of writing, eliminates the Precharge and Write Driver circuits, so, part of the power and area consumption has been reduced. According to the techniques used, the write and read noise margin is significantly improved and the write operation become easier to perform. Also due to the existence of a separate path for the read operation, RSNM is equaled to the HSNM. The average cell power at the frequency of 100 MHz for low power applications and 0.2V supply voltage, as compared to the best previous designs, has been improved by 34.9% and the leakage power of the hold state has been reduced by 27.6% and PDP has been improved by more than 35.2%, further, the maximum operating frequency of the cell has been increased by 39.1%, while it operates with the sub-threshold voltage of 0.2V to the frequency of 2.173 GHz.

High Hole Mobility Inorganic Halide Perovskite Field‐Effect Transistors with Enhanced Phase Stability and Interfacial Defect Tolerance

AbstractSo far, it has been difficult to fabricate thin‐film field‐effect transistors (TFTs) based on inorganic halide perovskites (IHPs) due to their phase‐instability and uncontrollable trap density. Here, the bottom‐gate bottom‐contact structured p‐type TFTs are presented using the optimized IHP in the active layer. The stable cubic‐CsPbI3 phase is successfully synthesized by doping bismuth iodide and reduced defect densities by adding potassium bromide. The IHP TFTs based on the tailored cubic‐CsPbI3 show high hole mobility of ≈10 cm2 V−1 s−1, an on‐off current ratio of 103, and a low subthreshold swing voltage of 0.43 V dec−1. In addition, the operational stability of the fabricated device is demonstrated through the bias stress test. This study suggests that one of the key factors for fabricating an ideal p‐type IHP transistor is managing charge transport properties in the IHP layer through defect engineering.

Large-scale voltage imaging in behaving mice using targeted illumination

SummaryRecent improvements in genetically encoded voltage indicators enabled optical imaging of action potentials and subthreshold transmembrane voltage in vivo. To perform high-speed voltage imaging of many neurons simultaneously over a large anatomical area, widefield microscopy remains an essential tool. However, the lack of optical sectioning makes widefield microscopy prone to background cross-contamination. We implemented a digital-micromirror-device-based targeted illumination strategy to restrict illumination to the cells of interest and quantified the resulting improvement both theoretically and experimentally with SomArchon expressing neurons. We found that targeted illumination increased SomArchon signal contrast, decreased photobleaching, and reduced background cross-contamination. With the use of a high-speed, large-area sCMOS camera, we routinely imaged tens of spiking neurons simultaneously over minutes in behaving mice. Thus, the targeted illumination strategy described here offers a simple solution for widefield voltage imaging of many neurons over a large field of view in behaving animals.

A 0.3 V PNN Based 10T SRAM with Pulse Control Based Read-Assist and Write Data-Aware Schemes for Low Power Applications.

An innovative and stable PNN based 10-transistor (10T) static random-access memory (SRAM) architecture has been designed for low-power bit-cell operation and sub-threshold voltage applications. The proposed design belongs to the following features: (a) pulse control based read-assist circuit offers a dynamic read decoupling approach for eliminating the read interference; (b) we have utilized the write data-aware techniques to cut off the pull-down path; and (c) additional write current has enhanced the write capability during the operation. The proposed design not only solves the half-selected problems and increases the read static noise margin (RSNM) but also provides low leakage power performance. The designed architecture of 1-Kb SRAM macros (32 rows × 32 columns) has been implemented based on the TSMC-40 nm GP CMOS process technology. At 300 mV supply voltage and 10 MHz operating frequency, the read and write power consumption is 4.15 μW and 3.82 μW, while the average energy consumption is only 0.39 pJ.

An Ultra-Low-Power Fully-Static Contention-Free Flip-Flop With Complete Redundant Clock Transition and Transistor Elimination

A redundancy eliminated flip-flop (REFF) is proposed targeting wide-range voltage scalability (1–0.3 V). Two types of redundancies are eliminated in the REFF to achieve low-power (LP) and reliable operation even in the sub-threshold voltage regime. First, redundant internal clock transitions are eliminated without degrading reliability by finding the optimal way of generating internally inverted clock to reduce dynamic power consumption. Then redundant transistors are identified and eliminated with a topological and logical method while keeping it fully static and contention-free. The simulation results show that the REFF is currently the only FF that fully eliminates redundancy while maintaining static and contention-free operation, and is reliable down to 0.31 V in Monte-Carlo simulations. The measurement results from a test chip fabricated in 28-nm LP CMOS technology show that the measured power is reduced by 69.7%/58.7% with 0%/10% activity at 1 V and by 70.3%/58.2% with 0%/10% activity at 0.4 V compared to the conventional transmission gate flip-flop (TGFF). A total of 100 dies from five corners were tested to demonstrate the reliability, and the REFF was functional down to 0.28 V.

FinFET Response under Radiation and Bias Stress: A Review

Abstract: Electronics devices are made on IC’s, the basic building block of these IC’s are transistors. Transistors are continuously upgraded to new forms from conventional BJT to the latest FinFET. The purpose of this paper is to provide a clear and exhaustive understanding of the state of the art, challenges, and future trends of silicon based devices to produced reliable output for a longer time period even in abnormal conditions like in space. The modeling techniques for the conventional transistor, different strategies have been proposed over the last years to model the FinFET behavior and increasing the storage capacity of the IC by increasing the number of transistors without occupying more space on the same IC. The behavior of the device is impacted by radiation, heat, and temperature, by which the overall performance of the devices is affected a lot. Keywords: CMOS, MOSFET, FinFET, diode, transistor, subthreshold voltage, threshold voltage, electromigration, and charge trapping.

A 0.4 V, 19 pW subthreshold voltage reference generator using separate line sensitivity and temperature coefficient correction stages

Sensor nodes and IoT systems require blocks that not only consume low power but also have good accuracy. Voltage reference generators are also considered important building blocks in sensor interface circuits. This paper presents a solution to increase the accuracy of low power subthreshold voltage generators by lowering the circuit sensitivity to temperature and supply voltage variations. The enhancement is achieved by using two separate stages for temperature coefficient (TC) and line sensitivity (LS) correction. A 0.18 µm standard CMOS process has been used for the proposed structure. The effects of parameter variations in the fabrication process are investigated using post-layout simulation and Monte Carlo analysis. In the supply voltage of 0.4–2 V, an LS of 143.8 ppm/V is obtained. In typical corner conditions, the achieved TC is 7.45 ppm/°C over the temperature range of 0–80 °C. Due to process changes, and mainly affected by threshold voltage variations, the average TC can change to 39.2 ppm/°C. The minimum power consumption at 0 °C and at a supply voltage of 0.4 V is 3.25 pW while the power consumption increases to 2.84 nW in 80 °C and at the maximum supply voltage of 2 V.

Phase locking of ultra-low power consumption stochastic magnetic bits induced by colored noise

Superparamagnetic tunnel junctions (STJs) are nanostructures with very low turnover barriers. The barrier height of an STJ is generally equal to the heat energy at room temperature; thus, it can oscillate automatically without external driving. Previous studies have shown that the randomness of an STJ can be driven by a subthreshold voltage. This synchronization can be adjusted using electrical noise, which is often considered as zero-field Gaussian white noise. However, the actual circuit and environment are inevitably associated with colored noise, which has not been considered previously. In this work, numerical simulations were performed to study the phase-locking characteristics of a single STJ with the aid of several typical types of colored noise. The results show that the phase-locked behavior of an STJ can be effectively enhanced by colored noise whose power spectral density per unit of bandwidth is proportional to its frequency. Meanwhile, colored noise whose power spectral density per unit of bandwidth and frequency are inversely proportional can suppress the synchronization of STJs by suppressing the increase in junction frequency.

The Organization of the Sinoatrial Node Microvasculature Varies Regionally to Match Local Myocyte Excitability.

The cardiac cycle starts when an action potential is produced by pacemaking cells in the sinoatrial node. This cycle is repeated approximately 100 000 times in humans and 1 million times in mice per day, imposing a monumental metabolic demand on the heart, requiring efficient blood supply via the coronary vasculature to maintain cardiac function. Although the ventricular coronary circulation has been extensively studied, the relationship between vascularization and cellular pacemaking modalities in the sinoatrial node is poorly understood. Here, we tested the hypothesis that the organization of the sinoatrial node microvasculature varies regionally, reflecting local myocyte firing properties. We show that vessel densities are higher in the superior versus inferior sinoatrial node. Accordingly, sinoatrial node myocytes are closer to vessels in the superior versus inferior regions. Superior and inferior sinoatrial node myocytes produce stochastic subthreshold voltage fluctuations and action potentials. However, the intrinsic action potential firing rate of sinoatrial node myocytes is higher in the superior versus inferior node. Our data support a model in which the microvascular densities vary regionally within the sinoatrial node to match the electrical and Ca2+ dynamics of nearby myocytes, effectively determining the dominant pacemaking site within the node. In this model, the high vascular density in the superior sinoatrial node places myocytes with metabolically demanding, high-frequency action potentials near vessels. The lower vascularization and electrical activity of inferior sinoatrial node myocytes could limit these cells to function to support sinoatrial node periodicity with sporadic voltage fluctuations via a stochastic resonance mechanism.

Subcellular Distribution of Persistent Sodium Conductance in Cortical Pyramidal Neurons.

Cortical pyramidal neurons possess a persistent Na+ current (I NaP), which, in contrast to the larger transient current, does not undergo rapid inactivation. Although relatively quite small, I NaP is active at subthreshold voltages and therefore plays an important role in neuronal input-output processing. The subcellular distribution of channels responsible for I NaP and the mechanisms that render them persistent are not known. Using high-speed fluorescence Na+ imaging and whole-cell recordings in brain slices obtained from mice of either sex, we reconstructed the I NaP elicited by slow voltage ramps in soma and processes of cortical pyramidal neurons. We found that in all neuronal compartments, the relationship between persistent Na+ conductance and membrane voltage has the shape of a Boltzmann function. Although the density of channels underlying I NaP was about twofold lower in the axon initial segment (AIS) than in the soma, the axonal channels were activated by ∼10 mV less depolarization than were somatic channels. This difference in voltage dependence explains why, at functionally critical subthreshold voltages, most I NaP originates in the AIS. Finally, we show that endogenous polyamines constrain I NaP availability in both somatodendritic and axonal compartments of nondialyzed cortical neurons.SIGNIFICANCE STATEMENT The most salient characteristic of neuronal sodium channels is fast inactivation. However, a fraction of the sodium current does not inactivate. In cortical neurons, persistent current (I NaP) plays a prominent role in many important functions. Its subcellular distribution and generation mechanisms are, however, elusive. Using high-speed fluorescence Na+ imaging and electrical recordings, we reconstructed the I NaP in soma and processes of cortical pyramidal neurons. We found that at near-threshold voltages I NaP originates predominately from the axon, because of the distinctive voltage dependence of the underlying channels and not because of their high density. Finally, we show that the presence of endogenous polyamines significantly constrains I NaP availability in all compartments of nondialyzed cortical neurons.

(Invited) Photo Induced Effects in OTFTs: Mechanisms and Applications

The technology based on organic devices and sensors is becoming attractive for a wide range of applications. Indeed, the intrinsic characteristics of the organic materials, as the low-temperature process, flexibility, lightweight, biocompatibility, and even biodegradability, make them the basis for devices for the emerging flexible plastic electronics. Among the different possible applications, the electro-optical properties of organic semiconductors can be exploited for the development of devices for photosensing [1], imaging array [2], and optical memory [3]. The wide number of organic materials with different absorption spectra allows the development of photosensors with large spectral sensitivity or tuned to specific wavelengths. In particular, organic phototransistors (OPTs) are particularly promising since they combine light detection, typical of the photodiodes (OPD), with the intrinsic signal amplification that increases the device sensitivity. The response of the OPTs to light irradiation was widely studied in the last years. The photons with energy above the optical gap generate excitons that can dissociate into free holes and electrons and, in p-type devices, the photo-generated electrons are trapped. Negative trapped charges induce the shift of the flat band voltage as well as the threshold voltage of the OPT resulting in the increase of the drain current [4]. The location and the nature of the defect states are still under investigation. Depending on the organic semiconductor, gate dielectric and device structure, the defects have been identified as interface states between semiconductor and insulators [2], defects into the semiconductors [3], defects induced by the diffusion of oxygen or moisture into the OSC [5]. Trapped charge near the source/drain electrodes can also reduce the injection contact barrier, increasing the drain current [6]. In any case, photo-induced effects appear to be a quite general effect since they are observed in devices with different semiconductor molecules and different gate dielectric (both organic and inorganic). In this presentation, the different mechanisms will be reviewed and the photo-induced effects will be discussed for OTFTs with evaporated and solution-processed semiconductors and different device structures. The high stability of these devices under gate bias stress, allows to investigate in detail the effects induced by the light.Furthermore, this presentation will show the application of the electro-optical properties of the OTFTs to the development of radiation detectors based on Organic Photo Transistors (OPTs), made on flexible substrate, and coupled with plastic scintillators. The OPTs are based on organic semiconductor dinaphtho [2,3-b:2′,3′-f] thieno[3,2-b] thiophene (DNTT) and have Bottom Gate/Top contact multi-finger device structure in order to simplify the device coupling with scintillator and increase the device area. The channel length, L, and channel width, W, are 100 µm and 2 cm, respectively. The gate, source and drain, and the semiconductor layer (DNTT, 30 nm thick) are thermally evaporated through metal masks. Spin coated layers of Cytop are used as gate dielectric and passivation layer. Thanks to the high quality of the semiconductor and of the dielectric/semiconductor interface, the devices show good electrical characteristics, with field effect mobility of about 1 cm2/Vs, a threshold voltage of the order of -10 V and subthreshold voltage of about 1V/dec. Furthermore, the devices do not show hysteresis of the transfer characteristics and are quite stable under bias stress. The OPTs have been characterized by electrical and optical measurement in order to evaluate the figures of merit parameters of the photodetectors, such as the photo-switching speed, the responsivity, and the photocurrent on/off ratio (also indicated as photosensitivity). The measurements have been carried out under monochromatic light with λ= 450 nm (above the optical gap of the DNTT). At this wavelength, these OPTs are able to detect very low light intensity (of the order of few nW/cm2), with a responsivity of 0.25 A/W and sensitivity of 2x10-2. The OPTs are successfully coupled with siloxane based scintillator.This work is supported by INFN-CNS5 project "FIRE".[1] J. Huang et al., Adv. Mater. 2020, 32, 1906027 [2] Y. Chu et al., Adv. Sci. 2016, 3, 1500435 [3] K. Pei et al., Adv. Mater. 2018, 30, 1706647 [4] A. Pierre and A.C. Arias, Flex. Print. Electron 1 (2016) 043001 [5] R. Jia and e. al., Adv. Funct. Mater., vol. 29, p. 1905657, 2019.[6] X. Wang et al., J. Appl. Phys. 107, 024509 (2010).

Mice That Express a KCNQ2 Channel Gain‐of‐Function Variant (R201C) Exhibit a Blunted Ventilatory Response to CO 2

The KCNQ1-5 (Kv7)family of voltage gated K+ channels activate at subthreshold voltages and are important determinants of resting membrane potential. In particular, both loss- and gain-of-function KCNQ2 pathogenic variants are associated with neurodevelopmental disorders characterized by seizures, myoclonus, disordered breathing and early mortality. To understand how KCNQ2 channels regulate breathing and contribute to mortality, we developed a conditional mouse line that expresses a KCNQ2 gain-of-function mutation (R201C) that in humans causes severe respiratory problems reminiscent of congenital central hypoventilation syndrome (CCHS). Considering CCHS involves disruption of neurons in the retrotrapezoid nucleus (RTN) that regulate breathing in response to changes in CO2/H+ (i.e., function as respiratory chemoreceptors), we first used fluorescent in situ hybridization to confirm that Kcnq2 channels are expressed by chemosensitive RTN neurons identified based on location and expression of Phox2b. Next, we used whole-body plethysmography to characterize baseline breathing and the ventilatory response to CO2 or low O2 in control (N=6) and Phox2bcre::Kcnq2R201C/+ (N=4) mice (P30; mixed sex). We found that Phox2bcre::Kcnq2R201C/+ mice show diminished ventilatory response to graded increases in CO2. In 7% CO2 (balance O2), Phox2bcre::Kcnq2R201C/+ mice show noticeably reduced respiratory frequency (283.9 ± 26.8 bpm for Phox2bcre::Kcnq2R201C/+ compared to 359.5 ± 16.86 bpm for controls); tidal volume (0.024 ± 0.005 ml/g for Phox2bcre::Kcnq2R201C/+ compared to 0.031 ± 0.003 ml/g for control), and minute ventilation (6.9 ± 1.97 ml/min/g for Phox2bcre::Kcnq2R201C/+ compared to 11.08 ± 1.58 ml/min/g for control). Interestingly, Phox2bcre::Kcnq2R201C/+ mice also show an augmented ventilatory response to hypoxia compared to control mice. In 10% O2 (5 min exposure), Phox2bcre::Kcnq2R201C/+ mice show increased respiratory frequency (Phox2bcre::Kcnq2R201C/+ 268.5 ± 5.073 bpm compared to 223.4 ± 15.84 bpm for controls); tidal volume (0.014 ± 0.001 ml/g for Phox2bcre::Kcnq2R201C/+ compared to control 0.013 ± 0.001 ml/g), and minute ventilation (3.81 ± 0.361 ml/min/g for Phox2bcre::Kcnq2R201C/+ compared to 2.95 ± 0.235 ml/min/g for control). These results suggest mice expressing the KCNQ2 variant R201C in Phox2b expressing neurons recapitulate the hypoventilatory phenotype exhibited by patients caring this variant. Our results also suggest peripheral chemoreceptor drive partially compensates for diminished central drive in Phox2bcre::Kcnq2R201C/+ mice.

Extremely foldable LTPS TFT backplane using blue laser annealing for low‐cost manufacturing of rollable and foldable AMOLED display

AbstractThe crystallization of a‐Si by blue laser annealing (BLA) is introduced for low‐cost, high‐resolution thin‐film transistor (TFT) backplanes for foldable and rollable AMOLED displays. A big advantage of BLA is to provide low‐temperature polycrystalline silicon (LTPS) with protrusion‐free active channel. The BLA LTPS TFT manufactured on flexible substrate exhibits high field‐effect mobility of 169 cm2/Vs, a smaller subthreshold voltage swing less than 201 mV/dec, and excellent electrical stability and mechanical robustness.

3‐1: Distinguished Paper: Foldable LTPS TFT Backplane using Blue Laser Annealing

The crystallization of a‐Si by blue laser annealing (BLA) is introduced for low‐cost high resolution, thin‐film transistor (TFT) backplanes for foldable and rollable AMOLED displays. A big advantage of BLA is to provide low temperature polycrystalline silicon (LTPS) with protrusion‐free active channel. The BLA LTPS TFT manufactured on flexible substrate exhibits high field effect mobility of 169 cm2/Vs, a subthreshold voltage swing less than 201 mV/dec and excellent electrical stability and mechanical robustness.

Effects of Ultrasonication on the Electrical Performance of a-IGZO TFTs

In this study, investigate the effect of ultrasonication on the oxide channel layer of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) based on different processing times. The ultrasonication treatment was applied at 40 kHz for 0, 10, 20, and 40 min before post annealing. Ultrasonication improved the electrical and surface morphology properties of a-IGZO thin-film transistors. The a-IGZO TFTs that underwent ultrasonication for 10 min exhibited enhanced electrical performance (saturation mobilities of 11.9 ㎠/Vs, current on/off ratio of 3.5 × 10<SUP>7</SUP>, threshold voltage of 6.1 V, and subthreshold voltage of 0.65 V/dec). Moreover, the dynamic and static responses of a resistive load–type inverter based on a-IGZO with ultrasonication are examined.

A 2.1 ppm/°C, 0.55–2.4 V, 5.6 nW, 235 mV, CMOS-only subthreshold voltage reference

This study presents a high-precision, ultra-low-power, and CMOS-only subthreshold voltage reference. VPTAT with a positive temperature coefficient (TC) and VCTAT with a negative TC were generated to obtain a low-temperature dependence voltage reference. VPTAT was implemented using two standard-threshold voltage (STV) transistors working in the subthreshold region, while, VCTAT was implemented by a high-threshold-voltage (HTV) transistor and an STV transistor biased in the subthreshold region to obtain a ΔVGS with a negative TC. The voltage reference circuit was implemented via a standard 0.18-μm CMOS process with the core size around 0.022 mm2. The pre and post simulation results showed an average output reference voltage of around 235 mV with different supply voltages. Under a temperature range of −30 to 80 °C and the supply voltage of 0.55 V, the best TCs were as low as 2.1 and 7.6 ppm/°C for pre and post simulations, respectively. The total power consumption was only 5.6 nW when the supply voltage is 0.55 V.

High-fidelity estimates of spikes and subthreshold waveforms from 1-photon voltage imaging invivo.

The ability to probe the membrane potential of multiple genetically defined neurons simultaneously would have a profound impact on neuroscience research. Genetically encoded voltage indicators are a promising tool for this purpose, and recent developments have achieved a high signal-to-noise ratio invivo with 1-photon fluorescence imaging. However, these recordings exhibit several sources of noise and signal extraction remains a challenge. We present an improved signal extraction pipeline, spike-guided penalized matrix decomposition-nonnegative matrix factorization (SGPMD-NMF), which resolves supra- and subthreshold voltages invivo. The method incorporates biophysical and optical constraints. We validate the pipeline with simultaneous patch-clamp and optical recordings from mouse layer 1 invivo and with simulated and composite datasets with realistic noise. We demonstrate applications to mouse hippocampus expressing paQuasAr3-s or SomArchon1, mouse cortex expressing SomArchon1 or Voltron, and zebrafish spines expressing zArchon1.

Junctionless Electric-Double-Layer TFTs on Paper Substrate

Junctionless Low-voltage electric-double-layer (EDL) thin-film transistors (TFTs) gated by solution-processed chitosan dielectric have been fabricated on paper substrate. The operating voltage is found to be as low as 1.0 V due to the large gate specific capacitance (5.4 μF cm−2 at 20 Hz) related to EDL effect induced by mobile ion. The field-effect mobility, subthreshold gate voltage swing and current on/off ratio is estimated to be 2.3 cm2 Vs−1, 110 mV decade−1 and 2 × 105, respectively. The reproducibility of pulse respond and stability of such device are also demonstrated, which indicates that the Junctionless Low-voltage EDL TFT has a potential for flexible electronics.