Abstract
Junctionless Low-voltage electric-double-layer (EDL) thin-film transistors (TFTs) gated by solution-processed chitosan dielectric have been fabricated on paper substrate. The operating voltage is found to be as low as 1.0 V due to the large gate specific capacitance (5.4 μF cm−2 at 20 Hz) related to EDL effect induced by mobile ion. The field-effect mobility, subthreshold gate voltage swing and current on/off ratio is estimated to be 2.3 cm2 Vs−1, 110 mV decade−1 and 2 × 105, respectively. The reproducibility of pulse respond and stability of such device are also demonstrated, which indicates that the Junctionless Low-voltage EDL TFT has a potential for flexible electronics.
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