Abstract
Room-temperature deposited 8.0 μm-thick mesoporous SiO2 dielectric shows a huge electric double layer (EDL) gate specific capacitance (4.16 μF/cm2). Battery drivable low-voltage (1.5 V) transparent EDL thin-film transistors (TFTs) with Al-doped ZnO nanocrystal channel layer gated by such dielectric are fabricated at room-temperature. The TFTs exhibit high-performance n-type transistor characteristics with a high field-effect mobility of 14.9 cm2/V s. The current on/off ratio and subthreshold gate voltage swing are estimated to be 2×106 and 82 mV/decade, respectively. Our results demonstrate that mesoporous SiO2 dielectrics with EDL effect are very promising for battery-powered portable transparent macroelectronics on temperature-sensitive substrates.
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