Abstract
The crystallization of a‐Si by blue laser annealing (BLA) is introduced for low‐cost high resolution, thin‐film transistor (TFT) backplanes for foldable and rollable AMOLED displays. A big advantage of BLA is to provide low temperature polycrystalline silicon (LTPS) with protrusion‐free active channel. The BLA LTPS TFT manufactured on flexible substrate exhibits high field effect mobility of 169 cm2/Vs, a subthreshold voltage swing less than 201 mV/dec and excellent electrical stability and mechanical robustness.
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