With the advancement of technology nodes, the challenging space radiation environment poses a significant threat to memory reliability. Spin transfer torque magnetic random access memory (STT-MRAM) is a formidable candidate for non-volatile memory for space applications due to its advantages of non-volatility, durability, speed and compatibility with CMOS technology. Although the STT-MRAM memory unit magnetic tunnel junction (MTJ) is naturally immune to radiation effects, the single event upset (SEU) affects the peripheral circuitry. A radiation-hardened circuit is proposed, which theoretically does not have ‘0' upset nodes and automatically recovers from ‘1' upset. Moreover, the circuit's radiation-hardened performance was corroborated through hybrid simulation utilizing 40-nm technology. The findings of this investigation hold significance for the use of space radiation-hardened STT-MRAM.