Electroluminescence Spectra Research Articles

Abnormal temperature-dependent transient electroluminescence spikes induced by the leakage of hole carriers in organic light-emitting diodes

The amplitude of the emission spike at the transient electroluminescence (TEL) falling edge is an important benchmark for evaluating the quantities of trapped charges existed in organic light-emitting diodes and often shows a normal temperature dependence which increases with the decreasing temperature. Surprisingly, an unreported abnormal temperature-dependent TEL spike was observed in this work. A series of experimental results relevant to the electroluminescence spectrum and TEL measurements demonstrate that this abnormal temperature-dependent behavior is induced by the leakage of hole carriers from the emission layer (EML) to an electron transport layer (ETL). After the voltage pulse is turned off, these holes already leaked into the ETL drift back toward the EML, subsequently engaging in radiative recombination with trapped electrons on guest molecules to generate a spike at the TEL falling edge. However, the drift process is hindered by the reduced carrier mobility of the ETL material with the decrease in temperature. As a result, the spike intensity weakens as the temperature decreases, which contradicts the conclusions reported in previous literatures. Therefore, this study not only leads to the reconsideration for the judgment criteria of the number of trapped charges but also provides valuable insight into the TEL research field of organic optoelectronic devices.

The Effect of AlN Epilayer Growth Rate on the Growth of Semipolar (11–22) InGaN/GaN Light Emitting Diode

This article presents the effect of aluminium nitride (AlN) epilayer (EPL) growth rate on the growth of semipolar (11–22) InGaN/GaN light emitting diode (LED). Three samples are grown with different AlN EPL growth rates, which are low (L1, 1.0 nm s−1), intermediate (L2, 1.3 nm s−1), and high (L3, 1.6 nm s−1) growth rate. The root‐mean‐square (RMS) and peak‐to‐valley roughness show an increasing trend with the increasing AlN EPL growth rate which is attributed to an increment in indium composition as justified by the photoluminescence results. The sample with AlN EPL growth rate of 1.3 nm s−1 (L2) exhibits an outstanding crystal quality in terms of defect densities reduction, with a minimum basal stacking fault density of 1.60 × 104 cm−1 as calculated. Besides that, the obvious fringes of InGaN/GaN peaks observed in 2θ−ω scan proves that a high abruptness multi‐quantum well is attained. Sample L2 also shows a single peak profile in both photoluminescence and electroluminescence spectra with green wavelength emission of 506 and 537 nm, respectively, indicating a homogeneous indium composition. As the injection current is swept from 5 to 40 mA for sample L2, a weak blueshift of ≈6 nm is observed which indicates a reduction in quantum‐confined Stark effect (QCSE).

Co‐Interlayer Engineering for Homogenous Phase Quasi‐2‐D Perovskite and High‐Performance Deep‐Blue Light‐Emitting Diodes

AbstractOrganic and inorganic hybrid perovskites are a class of solution‐processable semiconductors that hold significant promise for light‐emitting diode applications. However, the development of efficient blue perovskite light‐emitting diodes (PeLEDs) has remained a critical challenge. Although significant advancements have been achieved in the development of sky‐blue PeLEDs, the performance of pure‐blue and deep‐blue PeLEDs still lags. In this manuscript, by incorporating 1‐cyclohexene‐1‐ethanamine cation (CEA+) into the host 1‐phenylbutylamine cation (PBA+) spacer and fabricating mixed‐cations quasi‐2D perovskites, a homogeneous phase distribution in quasi‐2D perovskite films is achieved through precise tuning of the phase formation energy. The resulting PeLEDs exhibit remarkable performance with an external quantum efficiency (EQE) of 5.8% at 467 nm, which is one of the highest EQEs among the deep‐blue light quasi‐2D PeLED devices with emission wavelengths below 470 nm, Additionally, the device demonstrates a half‐lifetime of ≈ 25 min. Furthermore, the PeLEDs utilizing mixed‐cation perovskite exhibit a stable electroluminescence (EL) spectrum under varying voltage biases, even when the chlorine content in the halogen sites reaches as high as 30%. Overall, this work offers a novel and promising avenue to achieve both high EQE and a stable EL spectrum in blue‐light quasi‐2D PeLEDs.

Deciphering crystal structure of Li3Bi3Te2O12:Sm3+ phosphors with high thermal stability for plant cultivation and white light‐emitting diodes

AbstractThe novel orange‐red light‐emitting garnet‐type phosphors Li3Bi3Te2O12:xSm3+ (0.005 ≤ x ≤ 0.25) were first synthesized using the high‐temperature solid‐state reaction method. The phase structure was recorded with XRD. Raman spectroscopic analysis was conducted for the first time to extract detailed structural insights of the tellurate garnet Li3Bi3Te2O12:Sm3+. The characteristics of the obtained compounds were investigated, including particle morphology, elemental mapping, diffuse reflection spectra, excitation and emission spectra, thermal stability, chromaticity coordinates according to the Commission International del′Eclairage, and color purity. The Li3Bi3Te2O12:Sm3+ phosphor could be effectively excited by 406 nm irradiation, and four sharp peaks were presented. The dominant peaks are located at 613 and 653 nm, corresponding to the typical transition of Sm3+ ions at 4G5/2→6H7/2 and 4G5/2→6H9/2, respectively. The phosphors present a regular concentration quenching trend, with an optimum Sm3+ doping concentration of 0.02. Impressively, the product demonstrates remarkable thermal stability by maintaining an emission intensity of 93% at a working temperature of 423 K. Additionally, the thermal quenching temperature (T0.5) surpasses 480 K. The lighting performance of the white light‐emitting diode fabricated using Li3Bi3Te2O12:0.02Sm3+ phosphor has been found to be exceptional, characterized by a high color rendering index (Ra = 90) and a low correlated color temperature (CCT = 5122 K). The electroluminescent spectrum of the red light‐emitting diode device fabricated by Li3Bi3Te2O12:0.02Sm3+ overlapped well with the absorption spectra of the phytochromes, suggesting its potential for plant cultivation light source. In conclusion, considering all these photoluminescent properties mentioned above, Li3Bi3Te2O12:Sm3+ phosphor can be regarded as a promising material for daily illumination and plant cultivation LEDs.

Optical proximity sensors using multiple quantum well didoes

InGaN/GaN multiple quantum well (MQW) diodes perform multiple functions, such as optical emission, modulation and reception. In particular, the partially overlapping spectral region between the electroluminescence (EL) and responsivity spectra of each diode results in each diode being able to sense light from another diode of the same MQW structure. Here, we present a noncontact, optical proximity sensing system by integrating an MQW-based light transmitter and detector into a tiny GaN-on-sapphire chip. Changes in the external environment modulate the light emitted from the transmitter. Reflected light is received by the on-chip MQW detector, wherein the carried external modulation information is converted into electrical signals that can be extracted. The maximum detection proximity is approximately 17 mm, and the displacement detection accuracy is within 1 mm. Based on the detection of distance, we extend the application of the sensor to vibration and pressure detection. This monolithic integration design can replace external discrete light transmitter and detector systems to miniaturize reflective sensor architectures, enabling the development of novel optical sensors.

Rigidity‐Enhanced Narrowband Iridium(III) Complexes with Finely‐Optimized Emission Spectra for Efficient Pure‐Red Electroluminescence

AbstractAttaining phosphorescent materials with narrowband emission is crucial for advancing wide‐color‐gamut organic light‐emitting diode (OLED). Herein, a rigid modification strategy is introduced for iridium(III) complexes to achieve the narrowband red emission with negligible 0–1 peak. By introducing the rigid indolo[3,2,1‐jk]carbazole (ICz) into the cyclometalated ligand, Ir(III) complexes, ICziq‐Ir and ICzqz‐Ir, exhibit pure red phosphorescence with emission peaks at 608 and 613 nm and full widths at half‐maximum (FWHMs) of 37 and 38 nm (0.12 and 0.13 eV) in toluene, respectively. Furthermore, the specific site modification of ICzqz‐Ir greatly suppresses the high‐frequency vibration of the structure, resulting in the narrowband photoluminescent spectrum close to the Gaussian distribution with superior color purity. The OLEDs utilizing ICziq‐Ir and ICzqz‐Ir demonstrate maximum external quantum efficiencies of 21.4 and 17.8% as well as mild efficiency roll‐off. Remarkably, the electroluminescence spectra exhibit similar narrowband red emission with FWHMs of 37 and 43 nm and CIE coordinates of (0.65, 0.35) and (0.66, 0.34), attesting to the excellent color purity of the phosphorescent OLEDs.

A narrow-band blue emitting phosphor by co-doping Bi3+ and alkali metal ions (Li+, Na+ and K+) with dual luminescence center

The technology of solid-state lighting has developed for decades in various industries. Phosphor, as an element part, determines the application domain of lighting products. For instance, blue and red-emitting phosphors are required in the process of plant supplementing light, arrow-band emitting phosphors are applied to backlight displays, etc. In this work, a Bi3+-activated blue phosphor is obtained in a symmetrical and compact crystal structure of Gd3SbO7 (GSO). Then, the co-doping strategy of alkali metal ions (Li+, Na+, and K+) is used to optimize the performance. The result shows that the photoluminescence intensity is increased by 2.1 times and 1.3 times respectively by introducing Li+ and K+ ions. Not only that, it also achieves narrow-band emitting with the full width of half-maximum (FWHM) reaching 42 nm through Na+ doping, and its excitation peak position also shifts from 322 to 375 nm, which can be well excited by near-ultraviolet (NUV) light emitting diode (LED) chips (365 nm). Meanwhile, the electroluminescence spectrum of GSO:0.6 mol%Bi3+,3 wt%Na+ matches up to 93.39% of the blue part of the absorption spectrum of chlorophyll a. In summary, the Bi3+-activated blue phosphor reported in this work can synchronously meet the requirements of plant light replenishment and field emission displays.

Mid-infrared emission of germanium-tin films produced by sputtering

In this work, the synthesis of germanium-tin (GeSn) films by magnetron sputtering is reported. A fractional factorial experiment was conducted; the varied factors were temperature, power applied to Ge target by a radio-frequency source, and power applied to the Sn target by a direct-current source. Vibrational modes, film composition, morphology, deposition rate, dark conductivity, Raman spectra, and Fourier-transform infrared (FTIR) spectra of the GeSn films were analyzed. Mid-infrared spectrum of emission and absorption was obtained by FTIR electroluminescence (EL) spectroscopy in the range of 400–4000cm−1, thermal emission was monitored by a FLIR camera in the range of 8–14μm, and power emitted from the GeSn films was measured in the range of 2.7–5.3μm by means of a InAsSb photodetector; results obtained by these approaches at room temperature and low-field bias were consistent. Sample Ge0.71Sn0.29 exhibited Ge Raman crystalline fraction of 85%; from FTIR EL spectrum were observed peaks of absorption located at 1084, and 606 cm−1 that was attributed to Si−Si bonds from the c-Si substrate, as well as broadband attenuation of 2% in the range of 1500−3500cm−1, this behavior was associated to the self-heating of this sample at 90 °C. Sample Ge0.3Sn0.7 showed Raman crystalline fraction of 16 and 22% for Ge and Sn, respectively; from FTIR EL spectrum were observed peaks of emission located at 2.74 μm (0.452 eV) and 6.66 μm (0.186 eV), as well as broadband emission in the range of 600–2000 cm−1 attributed to Planck’s law at a temperature of 45 °C; these results were correlated to the proper content of Ge and Sn, fluctuating current, and polymorphic morphology of this sample.

All-fluorescent white organic light-emitting diodes employing a deep-blue HLCT material simultaneously as emitter and host achieving excellent electroluminescence performance with efficiency roll-off

Simultaneously achieving high efficiency and small efficiency roll-off remains a huge challenge for white organic light-emitting diodes (OLEDs), which greatly restricts their industrial application in the lighting field. Recently developed hybridized local and charge transfer (HLCT) materials have a “hot exciton” channel, which can maximize the utilization rate of excitons and suppress efficiency roll-off via rapid reverse intersystem crossing (RISC) from high-lying triplet state (Tn, n ≥ 2) to singlet state (S1). In this work, employing blue HLCT material pCzAnN as the sensitizing host, by precise concentration management, the traditional fluorescent C545T- and DCJTB-based green and orange-red OLEDs are first fabricated, which achieve the maximum external quantum efficiency (EQE) exceeding the theoretical limit of 5 %, reaching 8.51 % and 6.64 %, respectively. On this basis, by strategic device structure design, all-fluorescent two- and three-color white OLEDs are demonstrated having pCzAnN simultaneously as blue emitter and sensitizing host of C545T and DCJTB. The resulting two- and three-color white devices obtain maximum EQE beyond 5 %. What's more, all three-color white devices exhibit extremely small efficiency roll-off, where the efficiency drops are less than 1 % at a practical luminance of 1000 cd/m2, which is comparable to the best works reported in the literatures. At the same time, the optimized three-color white device realizes ideal white emission, in which the electroluminescence (EL) spectra contain three almost equal intensity emission wavebands accompanied by a high color rendering index of 87. Stable EL spectra under a wide luminance range (3863 ∼ 27710 cd/m2) indicate a huge potential application. We believe this work can provide new idea for developing high-efficiency and low roll-off white OLEDs in the future.

Blue-Emitting Cs(Pb,Cd)Br3 Nanocrystals Resistant to Electric Field-Induced Ion Segregation.

High-performance solution-processed perovskite light-emitting diodes (PeLEDs) have emerged as a good alternative to the well-established technology of epitaxially grown AIIIBV semiconductor alloys. Colloidal cesium lead halide perovskite nanocrystals (CsPbX3 NCs) exhibit room-temperature excitonic emission that can be spectrally tuned across the entire visible range by varying the content of different halogens at the X-site. Therefore, they present a promising platform for full color display manufacturing. Engineering of highly efficient PeLEDs based on bromide and iodide perovskite NCs emitting green and red light, respectively, does not face major challenges except low operational stability of the devices. Meanwhile, mixed-halide counterparts demonstrating blue luminescence suffer from the electric field-induced phase separation (ion segregation) phenomenon described by the rearrangement (demixing) of mobile halide ions in the crystal lattice. This phenomenon results in an undesirable temporal redshift of the electroluminescence spectrum. However, to realize spectral tuning and, at the same time, address the issue of ion segregation less mobile Cd2+ ion could be introduced in the lattice at Pb2+-site that leads to the band gap opening. Herein, we report an original synthesis of CsPb0.88Cd0.12Br3 perovskite NCs and study their structural and optical properties, in particular electroluminescence. Multilayer PeLEDs based on the obtained NCs exhibit single-peak emission centered at 485 nm along with no noticeable change in the spectral line shape for 30 min which is a significant improvement of the device performance.

Blue-white electroluminescence of diamond/WS2 quantum dot composite films

Two kinds of diamond films with completely different morphologies were prepared on N-type heavily doped silicon wafers by microwave plasma chemical vapor deposition (MPCVD) method, namely, micron-scale large grain polycrystalline diamond film dominated by (220) crystal plane (220DF) and nano-scale small grain polycrystalline diamond film dominated by (111) crystal plane (111DF). And WS2 quantum dot powder was obtained by aqueous liquid phase ultrasonic method. Then, the 111DF/WS2 quantum dot composite structure film (111DWSF) and 220DF/WS2 quantum dot composite structure film (220DWSF) were prepared by applying WS2 quantum dot powder uniformly on diamond film substrate. The results of electroluminescence (EL) detection show that the 220DWSF device emits visible blue light, and the main peak of EL spectrum is located at 443 nm in the blue region. The 111DWSF device emits white light, and the corresponding EL spectra show strong emission peaks in the blue region (454 nm), green region (536 nm) and red region (632 nm) respectively, meanwhile, the luminous intensity of 111DWSF device is much higher than that of 220DWSF device. In addition, it is also found that the 220DWSF EL device does not show obvious rectification characteristics, while the 111DWSF EL device has obvious rectification characteristics. After FN fitting of the IV characteristic curve of 111DWSF EL device, the tunneling characteristics of electrons are found in the region of high electric field intensity.

Synergistic Enhancement of Emitting Dipole Orientation between Pt‐Based Phosphorescent Sensitizers and Boron‐Based Multi‐Resonance Fluorescent Emitters for High‐Performance Phosphor‐Sensitized Fluorescent Organic Light‐Emitting Diodes

Phosphor‐sensitized fluorescent (PSF) organic light‐emitting diodes (OLEDs) emerge as an attractive solution for realizing high‐performance displays with high color purity, meeting the Broadcast Television 2020 (BT.2020) requirements, by fully harnessing the benefits of both phosphorescent and fluorescent emitters. Herein, the synergistic effect of a Pt sensitizer and a boron (B)‐based multi‐resonance (MR)‐fluorescent emitter are introduced to enhance the efficiency of blue‐emitting PSF–OLEDs. Notably, it is confirmed that the interaction between the empty pz orbital in the boron atom of the MR emitter and the unpaired electrons in the dz2 orbital of the Pt emitter plays a crucial role. The combination results in an enhancement of the horizontal emitting dipole orientation (EDO) to 81%, a marked improvement compared to the individual components of Pt phosphor (69%) or MR emitter (78%). The synergistic approach leads to the realization of high‐performance blue‐emitting PSF‐OLEDs with a maximum external quantum efficiency of 25%, a peak intensity at 465 nm in the electroluminescence spectrum, and a full width at half maximum of 29 nm, achieved by enhancing the outcoupling. In these findings, insight is provided into design strategies for developing PSF systems based on Pt sensitizer and B‐terminal emitter to achieve efficient energy transfer as well as improved EDO.

In Situ Hydrolysis of Phosphate Enabling Sky-Blue Perovskite Light-Emitting Diode with EQE Approaching 16.32.

The performance of blue perovskite light-emitting diodes (PeLEDs) lags behind the green and red counterparts owing to high trap density and undesirable red shift of the electroluminescence spectrum under operation conditions. Organic molecular additives were employed as passivators in previous reports. However, most commonly have limited functions, making it challenging to effectively address both efficiency and stability issues simultaneously. Herein, we reported an innovatively dynamic in situ hydrolysis strategy to modulate quasi-2D sky-blue perovskites by the multifunctional passivator phenyl dichlorophosphate that not only passivated the defects but also underwent in situ hydrolysis reaction to stabilize the emission. Moreover, hydrolysis products were beneficial for low-dimensional phase manipulation. Eventually, we obtained high-performance sky-blue PeLEDs with a maximum external quantum efficiency (EQE) of 16.32% and an exceptional luminance of 5740 cd m-2. More importantly, the emission peak of devices located at 485 nm remained stable under different biases. Our work signified the significant advancement toward realizing future applications of PeLEDs.

Angle‐Independent Top‐Emitting Quantum‐Dot Light‐Emitting Diodes Using a Solution‐Processed Subwavelength Scattering–Capping Layer

AbstractOwing to the excellent optoelectronic properties of colloidal quantum dots (QDs), light‐emitting diodes based on QDs (QLEDs) have been considered one of the most promising electroluminescence (EL) devices for full‐color displays with a wide color gamut. Particularly, top‐emission device architecture has been of interest to both academia and industry, because of the advantages in light outcoupling, aperture ratios, and integration with conventional backplanes. In this structure, however, angle‐dependent color shifts originating from a variation in microcavity length are a critical issue that needs to be resolved. Here, a solution‐processed dual‐functional scattering–capping layer (SCPL) using ZnO nanoparticles on top‐emitting QLEDs with ZnSeTe/ZnSe/ZnS QDs to modulate the optical interference is presented. By precisely controlling the thickness of the SCPL, the EL intensity and spectrum can be redistributed to produce a uniform color from any viewing angle. It is discovered that, unlike conventional CPLs, the formation of random nanocracks and nanoclusters in the SCPL adds subwavelength light‐scattering capabilities, which promotes light extraction. The QLEDs with the solution‐processed SCPL exhibit a 44% increase in the maximum external quantum efficiency, with completely imperceptible angle‐dependent spectral shifts. The SCPL is expected to be applied to the development of high‐performance and next‐generation QLED displays.

Phase Engineering Reinforced Energy Transfer for High-Performance Blue Perovskite Light-Emitting Diodes.

Layered metal-halide perovskites, a category of self-assembled quantum wells, are of paramount importance in emerging photonic sources, such as lasers and light-emitting diodes (LEDs). Despite high trap density in two-dimensional (2D)perovskites, efficient non-radiative energy funneling from wide- to narrow-bandgap components, sustained by the Förster resonance energy transfer (FRET) mechanism, contributes to efficient luminescence by light or electrical injection. Herein, it is demonstrated that bandgap extension of layered perovskites to the blue-emitting regime will cause sluggish and inefficient FRET, stemming from the tiny spectral overlap between different phases. Motivated by the importance of blue LEDs and inefficient energy transfer in materials with phase polydispersity, wide-bandgap quasi-2D perovskites with narrow phase distribution, improved crystallinity, and the pure crystal orientation perpendicular to the charge transport layer are developed. Based on this emitter, high-performance blue perovskite LEDs with improved electroluminescence (EL) external quantum efficiency (EQE) of 7.9% at 478nm, a narrow full width at half-maximum (FWHM) of 22nm and a more stable EL spectra are achieved. These results provide an important insight into spectrally stable and efficient blue emitters and EL devices based on perovskites.

Luminescence in Zinc Selenide Doped with Sn and (Sn, Dy) Phosphors

AbstractZinc selenide doped with Sn and (Sn, Dy) phosphors has been prepared by firing the samples in an atmosphere of nitrogen gas. The voltage and frequency dependence of electrolyte brightness has been studied. Voltage dependence of electroluminescence (EL) brightness reveals an acceleration collision mechanism in the Schottky barrier at the metal–semiconductor interfaces. EL and photoluminescence (PL) spectra and thermoluminescence (TL) glow curves of these phosphors have also been recorded to understand the nature and mechanism involved in the luminescence process. The trapping parameters are calculated for the glow curves of these phosphors.

Characteristics of Light‐Emitting Diodes Based on Terbium‐Doped Ga2O3 Films

Terbium (Tb)‐doped Ga2O3 films are grown on Si substrates by pulsed laser deposition at a substrate temperature of 500 °C. The electroluminescence (EL) peaks detected at 488, 543, 587, and 622 nm from the Tb‐doped Ga2O3/Si light‐emitting diodes (LEDs) correspond to the 5D4–7F6, 5D4–7F5, 5D4–7F4, and 5D4–7F3 transitions, respectively. The EL intensity initially increases with current up to 70 mA, followed by a decrease at higher currents. Notably, there is no discernible shift in the EL spectra peaks as the operating current varies from 5 to 90 mA. These findings imply that the Tb‐doped Ga2O3/Si LED, characterized by its remarkable wavelength stability, holds significant potential for advancing the development of highly efficient LEDs across diverse applications.

Nucleophilic Reaction‐Enabled Chloride Modification on CsPbI3 Quantum Dots for Pure Red Light‐Emitting Diodes with Efficiency Exceeding 26 %

AbstractHigh‐performance pure red perovskite light‐emitting diodes (PeLEDs) with an emission wavelength shorter than 650 nm are ideal for wide‐color‐gamut displays, yet remain an unprecedented challenge to progress. Mixed‐halide CsPb(Br/I)3 emitter‐based PeLEDs suffer spectral stability induced by halide phase segregation and CsPbI3 quantum dots (QDs) suffer from a compromise between emission wavelength and electroluminescence efficiency. Here, we demonstrate efficient pure red PeLEDs with an emission centered at 638 nm based on PbClx‐modified CsPbI3 QDs. A nucleophilic reaction that releases chloride ions and manipulates the ligand equilibrium of the colloidal system is developed to synthesize the pure red emission QDs. The comprehensive structural and spectroscopic characterizations evidence the formation of PbClx outside the CsPbI3 QDs, which regulates exciton recombination and prevents the exciton from dissociation induced by surface defects. In consequence, PeLEDs based on PbClx‐modified CsPbI3 QDs with superior optoelectronic properties demonstrate stable electroluminescence spectra at high driving voltages, a record external quantum efficiency of 26.1 %, optimal efficiency roll‐off of 16.0 % at 1000 cd m−2, and a half lifetime of 7.5 hours at 100 cd m−2, representing the state‐of‐the‐art pure red PeLEDs. This work provides new insight into constructing the carrier‐confined structure on perovskite QDs for high‐performance PeLEDs.

Nucleophilic Reaction-Enabled Chloride Modification on CsPbI3 Quantum Dots for Pure Red Light-Emitting Diodes with Efficiency Exceeding 26 .

High-performance pure red perovskite light-emitting diodes (PeLEDs) with an emission wavelength shorter than 650 nm are ideal for wide-color-gamut displays, yet remain an unprecedented challenge to progress. Mixed-halide CsPb(Br/I)3 emitter-based PeLEDs suffer spectral stability induced by halide phase segregation and CsPbI3 quantum dots (QDs) suffer from a compromise between emission wavelength and electroluminescence efficiency. Here, we demonstrate efficient pure red PeLEDs with an emission centered at 638 nm based on PbClx -modified CsPbI3 QDs. A nucleophilic reaction that releases chloride ions and manipulates the ligand equilibrium of the colloidal system is developed to synthesize the pure red emission QDs. The comprehensive structural and spectroscopic characterizations evidence the formation of PbClx outside the CsPbI3 QDs, which regulates exciton recombination and prevents the exciton from dissociation induced by surface defects. In consequence, PeLEDs based on PbClx -modified CsPbI3 QDs with superior optoelectronic properties demonstrate stable electroluminescence spectra at high driving voltages, a record external quantum efficiency of 26.1 %, optimal efficiency roll-off of 16.0 % at 1000 cd m-2 , and a half lifetime of 7.5 hours at 100 cd m-2 , representing the state-of-the-art pure red PeLEDs. This work provides new insight into constructing the carrier-confined structure on perovskite QDs for high-performance PeLEDs.

Valley-centre tandem perovskite light-emitting diodes.

Perovskite light-emitting diodes (PeLEDs) have emerged as a promising new light source for displays. The development roadmap for commercializing PeLEDs should include a tandem device structure, specifically by stacking a thin nanocrystal PeLED unit and an organic light-emitting diode unit, which can achieve a vivid and efficient tandem display; however, simply combining light-emitting diodes with different characteristics does not guarantee both narrowband emission and high efficiency, as it may cause a broadened electroluminescence spectra and a charge imbalance. Here, by conducting optical simulations of the hybrid tandem (h-tandem) PeLED, we have discovered a crucial optical microcavity structure known as the h-tandem valley, which enables the h-tandem PeLED to emit light with a narrow bandwidth. Specifically, the centre structure of the h-tandem valley (we call it valley-centre tandem) demonstrates near-perfect charge balance and optimal microcavity effects. As a result, the h-tandem PeLED achieves a high external quantum efficiency of 37.0% and high colour purity with a narrow full-width at half-maximum of 27.3 nm (versus 64.5 nm in organic light-emitting diodes) along with a fast on-off response. These findings offer a new strategy to overcome the limitations of nanocrystal-based PeLEDs, providing valuable optical and electrical guidelines for integrating different types of light-emitting device into practical display applications.