Abstract
AbstractZinc selenide doped with Sn and (Sn, Dy) phosphors has been prepared by firing the samples in an atmosphere of nitrogen gas. The voltage and frequency dependence of electrolyte brightness has been studied. Voltage dependence of electroluminescence (EL) brightness reveals an acceleration collision mechanism in the Schottky barrier at the metal–semiconductor interfaces. EL and photoluminescence (PL) spectra and thermoluminescence (TL) glow curves of these phosphors have also been recorded to understand the nature and mechanism involved in the luminescence process. The trapping parameters are calculated for the glow curves of these phosphors.
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