Si Devices Research Articles

Implementation of the electron track-structure mode for silicon into PHITS for investigating the radiation effects in semiconductor devices

In order to elucidate the mechanism of radiation effects in silicon (Si) devices, such as pulse-height defects and semiconductor soft errors, we developed an electron track-structure model dedicated to Si and implemented it into particle and heavy ion transport code system (PHITS). Then, we verified the accuracy of our developed model by comparing the ranges and depth-dose distributions of electrons in Si obtained from this study with corresponding experimental values and other simulated results. As an application of the model, we calculated the mean energies required to create an electron–hole pair in crystalline Si. Our calculated result agreed with the experimental data when the threshold energy for generating secondary electrons was set to 2.75 eV, consistent with the corresponding data deduced from past studies. This result suggested that the improved PHITS can contribute to the precise understanding of the mechanisms of radiation effects in Si devices.

Memristive Switching and Density-Functional Theory Calculations in Double Nitride Insulating Layers.

In this paper, we demonstrate a device using a Ni/SiN/BN/p+-Si structure with improved performance in terms of a good ON/OFF ratio, excellent stability, and low power consumption when compared with single-layer Ni/SiN/p+-Si and Ni/BN/p+-Si devices. Its switching mechanism can be explained by trapping and de-trapping via nitride-related vacancies. We also reveal how higher nonlinearity and rectification ratio in a bilayer device is beneficial for enlarging the read margin in a cross-point array structure. In addition, we conduct a theoretical investigation for the interface charge accumulation/depletion in the SiN/BN layers that are responsible for defect creation at the interface and how this accounts for the improved switching characteristics.

Self-powered photosensor based on curcumin:reduced graphene oxide (CU:rGO)/n-Si heterojunction in visible and UV regions

This study proposes a novel photosensor that uses curcumin:reduced graphene oxide/silicon (CU:rGO)/ n -Si heterojunction, prepared at different molar ratios of rGO with CU. The CU:rGO was deposited on an n-Si by electrochemically. The EDX, XRD, SEM and absorbance analyses of CU:rGO film were investigated. From the I-V measurements, the all CU:rGO/ n -Si devices showed excellent rectification characteristics both in the dark and under various illumination intensities. The device with higher rGO ratio (labelled D1) had better performance overall having the rectification ratio of 86094, the ideality factor of 2.15 and photosensitivity of 198 (at 150 mW/cm 2 ), which was attributed to the extraordinary electro-optical properties of rGO. Hence, the electrical and optical properties of D1 device were analyzed in detailed. The typical I-V measurements were conducted both in dark and under AM 1.5 G illumination of various light intensities. The intensity of the incident light varied from 10 to 150 mW/cm 2 . The photocurrent exhibited a strong dependence on the light intensity. The I-V measurements of another device (labelled D4) prepared under the same conditions were achieved at 365 nm and 395 nm wavelengths and it showed good sensitivity to light even in the UV region. Furthermore, both D1 and D4 devices operated in self-powered mode in visible and UV light without the need for any external voltage. According to the experimental results, the produced CU:rGO/n-Si devices can be potential devices for photosensor applications in a wide spectral region. • A curcumin:reduced graphene oxide(CU:rGO/n-Si heterojunction photosensor, prepared at different molar ratios of rGO with CU. • The EDX, XRD, SEM and absorbance analyses of CU:rGO film were investigated. • The CU:rGO/ n -Si device showed excellent rectification characteristics both under visible and UV light illumination. • Both under visible light and at 365 nm and 395 nm, the device showed self-powered mode. • The photosensitivity reached to 1.0 × 10 5 at the zero biased point for 150 mW/cm 2 illumination power.

Design of hybrid SiC/Si based T‐type three‐level LLC$ LLC$ resonant converter with wide‐input range and low conduction loss for automotive auxiliary power module

The auxiliary power module (APM) in the electrical vehicle converts the high voltage of battery pack to the low voltage to supply the electric power for the internal loads, including electric power steering, electric turbo, headed windshield and cooling pumps. The increasing demands on charging time and mileage have made the battery packs with even higher voltage (e.g. 800 V) a promising option. However, it brings a new challenge for the APM, and either the 1.2-kV silicon carbide (SiC) device or the three-level (TL) topology are used conventionally. This work proposes a cost-effective hybrid SiC/Si-based T-type TL L L C $ LLC$ resonant converter for the vehicular APM application with a high step-down ratio. The 1.2-kV SiC and 650-V Si devices are used as the main and auxiliary switches, respectively. It fully utilizes the voltage rating of device, and also improves the efficiency compared with conventional TL topology. To improve the gain range and electromagnetic interference performance, a variable frequency and adjustable phase-shift modulation scheme is adopted. At the same time, the steady-state time-domain model is established to elaborate the operation principles, topology features, and boundary conditions for soft-switching. Furthermore, the precise solutions for switching frequency and phase-shift angle are figured out. Finally, the effectiveness of model is verified by the simulation as well as the experiment. A 1-kW prototype for the application in the APM is demonstrated with the input voltage of 640–840 V and a constant output of 48 V/ 21 A.

A SiC and Si Hybrid Five-Level Unidirectional Rectifier for Medium Voltage Applications

Following the continuous development of wide bandgap (WBG) devices and multilevel converter technology, medium voltage active front ends are becoming promising in future high-power-density and high-power applications. However, the cost issue is one of the major drawbacks, which stops the WBG devices from being widely applied in high-power areas. This article proposes a silicon carbide (SiC) and silicon (Si) hybrid five-level unidirectional rectifier. It requires only four SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MOSFET</small> s with relatively low blocking voltage and four Si diodes. Meanwhile, by adding snubber capacitors, all the Si devices are with low-speed switching, and the voltage stresses of fast SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MOSFET</small> s are minimized. In this article, operational analysis and carrier-based phase-disposition pulsewidth modulation scheme for this circuit are discussed in detail. The capacitor voltage balancing and unity power factor are both realized. Simulation and scaled-down experimental results are demonstrated to verify the proposed rectifier. Furthermore, the comparison of the hybrid five-level rectifiers is given to show the advantages of the proposed rectifier in terms of voltage stress, efficiency, and cost.

(Invited) Considerations and Strategies for High-Temperature Ultra-Wide Bandgap Gallium Oxide Power Modules

There is a compelling need for high-density power electronic components and systems capable of operation at high ambient temperatures in automotive, aerospace, and down-hole applications. However, these needs are challenging the fundamental limit of silicon-based converters. While wide-bandgap (WBG) power semiconductors, particularly silicon carbide (SiC) and gallium nitride (GaN), have become promising alternatives to silicon (Si), they show diminished performance benefits at high temperatures.In the last several years, an ultra-wide-bandgap (UWBG) semiconductor, gallium oxide (Ga2O3), has emerged as a viable candidate for high-temperature power electronics with capabilities beyond existing technologies due to its large bandgap, controllable doping, and the availability of large-diameter, relatively-inexpensive substrates. The fundamental limit for high-temperature operation of semiconductors is the concentration of intrinsic carriers, which increases with temperature. Thanks to the UWBG of Ga2O3 (4.8 eV, compared to 1.1 eV for Si, 3.2 eV for SiC, and 3.4 eV for GaN), it achieves over 10-times lower intrinsic carrier concentration than Si. Compared to Si, SiC, and GaN devices, unipolar Ga2O3 devices also have superior theoretical limit for the trade-off between on-resistance and breakdown voltage, enabling a higher power conversion efficiency and power density.While Ga2O3 shows promise in these respects, due to its low thermal conductivity, conventional packaging and cooling strategies are not suitable. Simulations reveal that, compared to SiC, Ga2O3 power devices experience greater hot spot effects with higher peak junction temperatures and greater temperature differences across the chip, which could reduce the reliability of the packaged device. Simulations and preliminary experiments show that top-side cooling can counteract these effects and result in comparable thermal performance to SiC devices. This improvement shows the significant impact that the package and cooling strategy have on the performance of the Ga2O3 devices. This presentation will review this critical device-package-thermal relationship with electrothermal simulations and experimental measurements.Moreover, while Ga2O3 power devices have demonstrated superior high-temperature stability compared to SiC devices, package advancements at temperatures above 200°C are limited. The major limitation for high-temperature power modules is the encapsulation. The encapsulation provides essential electrical insulation, as well as corrosion resistance and protection. Conventional encapsulants are polymers, which have high dielectric strength for good electrical insulation, and low elastic modulus for low thermo-mechanical stress. However, typical polymers degrade rapidly at temperatures above 200°C. Accordingly, non-polymeric materials are needed for higher temperature operation.Hydroset ceramics have been evaluated as a high-temperature encapsulant. However, their porous structure reduces their electrical insulation effectiveness, and can cause reduced corrosion resistance. An alternate non-polymeric material is glass. Low-melting-temperature glass composites have emerged as a promising high-temperature encapsulant. It was found that the lead-glass composite has improved thermal stability compared to commercial polymeric materials. While the partial discharge inception voltage (PDIV) of the polymeric materials decreased by more than 80 % after just 100-200 hours of soaking at 250°C, the lead-glass composite samples showed no change in PDIV after 1000 hours. This feature is particularly important for realizing the full potential of Ga2O3, which has a critical breakdown field strength of 8 MV/cm. Accordingly, to operate these devices at high temperature and high-voltage, the package encapsulant must simultaneously have high thermal stability and dielectric strength. This presentation will review advancements in power module packaging that are needed to realize the full potential of Ga2O3 power devices.

Monolithic Integration of Graphene in SiC Radiation Sensors for Harsh-Environment Applications

Due to their low leakage current, low noise levels, high thermal conductivity, and potential radiation hardness, SiC devices offer various advantages over Si devices in certain applications. As a result, they are being considered for operation in harsh environments, such as plasma diagnostic systems in future nuclear fusion reactors or in high energy physics applications. We report on relevant results of the GRACE project, which seeks to deliver a new generation of SiC sensors with graphene-enhanced contacts. Such devices are aimed to be radiation-hard and functional at high temperatures. The work presented in this paper focuses on the optimisation of the electrical contacts, along with the electrical characterisation and radiation-tolerance assessment of the first sensor prototypes produced.

SiC Mass Commercialization: Present Status and Barriers to Overcome

In an increasingly electrified technology driven world, power electronics is central to the entire clean energy manufacturing economy. Silicon (Si) power devices have dominated power electronics due to their low cost volume production, excellent starting material quality, ease of fabrication, and proven reliability. Although Si power devices continue to improve, they are approaching their operational limits primarily due to their relatively low bandgap, critical electric field, and thermal conductivity that result in high conduction and switching losses, and poor high temperature performance. Silicon Carbide’s (SiC) compelling efficiency and system benefits have led to significant development efforts over the last two decades and today planar and trench MOSFETs, and JFETs are commercially available from several vendors as discrete components or in high power modules in the of 650 V to 1700 V voltage range. High impact application opportunities, where SiC devices are displacing their incumbent Si counterparts, have emerged and include automotive and rail power electronics with reduced losses and reduced cooling requirements; novel data center topologies with reduced cooling loads and higher efficiencies; variable frequency drives for efficient high power electric motors at reduced overall system cost; more efficient, flexible, and reliable grid applications with reduced system footprint; and “more electric aerospace” with weight, volume, and cooling system reductions contributing to energy savings. In particular, SiC insertion in electric vehicles brings major competitive advantages and is a volume application opportunity that can spur manufacturing economies of scale and lower system costs. As SiC continues to grow, the industry is lifting the last barriers to mass commercialization that include higher than Si device cost, relative lack of wafer planarity, the presence of basal plane dislocations, reliability and ruggedness concerns, and the need for a workforce skilled in SiC power technology to keep up with the rising demand. It should be noted that in many applications, insertion of SiC reduces overall system cost compared to Si even though SiC devices can cost 2-3 more than their Si counterparts. This is due to the passive component and cooling system simplifications enabled by the efficient high frequency SiC operation. In this paper, we will review key aspects of SiC technology and discuss overcoming barriers to mass commercialization.

Electrical Behaviors of the Co‐ and Ni‐Based POMs Interlayered Schottky Photodetector Devices

AbstractPolyoxometalates (POMs) are attractive materials for various applications such as energy storage, catalysis and medicine. Here, Co and Ni‐based POMs are chemically synthesized and characterized by X‐ray diffractometer (XRD) and Fourier transform infrared spectroscopies (FT‐IR) for structural characterization. While the morphological behaviors are analyzed by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and atomic force microscopy (AFM), the optical properties are investigated by UV‐Vis spectrometer. Electrochemical characterizations are carried out by cyclic voltammetry to determine oxidation levels of the metal centers in the POMs. The CoPOM and NiPOM are inserted in between the Al metal and p‐Si semiconductor to obtain Al/CoPOM/p‐Si and Al/NiPOM/p‐Si Schottky‐type photodetector devices. Current‐voltage (I–V) and current‐transient (I–t) measurements are employed to understand the electrical properties of the Al/CoPOM/p‐Si and Al/NiPOM/p‐Si devices under dark and various light power intensities. The devices exhibit phototransistor like I–V characteristics in forward biases due to having POMs active layers. Various device parameters are extracted from the I–V measurements and discussed in details. I–t measurements are performed to determine various detector parameters such as responsivity and specific detectivity values for under 2 V and zero biases. The Al/CoPOM/p‐Si and Al/NiPOM/p‐Si Schottky‐type photodetector devices can be employed in optoelectronic applications.

(Invited) Breakthrough Avalanche and Short Circuit Robustness in Vertical GaN Power Devices

Power devices are highly desirable to possess excellent avalanche and short-circuit (or surge-current) robustness for numerous power electronics applications like automotive powertrains, electric grids, motor drives, among many others. Current commercial GaN power device, the lateral GaN high-electron-mobility transistor (HEMT), is known to have no avalanche capability and very limited short-circuit robustness. These limitations have become a roadblock for penetration of GaN devices in many industrial power applications. Recently, through collaborations with NexGen Power Systems (NexGen), Inc., we have demonstrated breakthrough avalanche, surge-current and short-circuit robustness in NexGen’s vertical GaN p-n diodes and fin-shape junction-gate field-effect-transistors (Fin-JFETs). These large-area GaN diodes and Fin-JFETs were manufactured in NexGen’s 100 mm GaN-on-GaN fab. The demonstrated avalanche, surge-current and short-circuit capabilities are comparable or even superior to Si and SiC power devices. Additionally, vertical GaN Fin-JFETs were found to fail to open-circuit under avalanche and short-circuit conditions, which is highly desirable for the system safety. This talk reviews the key robustness results of vertical GaN power devices and unveils the enabling device physics. Fundamentally, these results signify that, in contrast to some popular belief, GaN devices with appropriate designs can achieve excellent robustness and thereby encounter no barriers for applications in electric vehicles, grids, renewable processing, and industrial motor drives.

A graphene pH sensor fabrication process for a nanotechnology laboratory course

AbstractA laboratory course experiment is described that combines traditional semiconductor fabrication techniques with the application of a nanotechnology‐relevant material, graphene. Sensor devices made with graphene are integrated with a microfluidic device in order to introduce students to new applications of this technology in biology and medicine. The fabrication and test process for a pH sensor is used as a tangible example, exhibiting a changing resistance across graphene strips immersed in different pH buffer solutions. The processing and test equipment required is available in many Si device fabrication educational laboratories.

Evaluation of GaN HEMTs in H3TRB Reliability Testing

Gallium Nitride (GaN) power devices can offer better switching performance and higher efficiency than Silicon Carbide (SiC) and Silicon (Si) devices in power electronics applications. GaN has extensively been incorporated in electric vehicle charging stations and power supplies, subjected to harsh environmental conditions. Many reliability studies evaluate GaN power devices through thermal stresses during current conduction or pulsing, with a few focusing on high blocking voltage and high humidity. This paper compares GaN-on-Si High-Electron-Mobility Transistors (HEMT) device characteristics under a High Humidity, High Temperature, Reverse Bias (H3TRB) Test. Twenty-one devices from three manufacturers were subjected to 85 °C and 85% relative humidity while blocking 80% of their voltage rating. Devices from two manufacturers utilize a cascade configuration with a silicon metal-oxide-semiconductor field-effect transistor (MOSFET), while the devices from the third manufacturer are lateral p-GaN HEMTs. Through characterization, three sample devices have exhibited degraded blocking voltage capability. The results of the H3TRB test and potential causes of the failure mode are discussed.

Nonvolatile and Voltage-Polarity-Independent Write-Once–Read-Many-Times Memory Feature of an Al/AlOₓ:N/n⁺-Si Device

An aluminum oxynitride (AlO_<i>x</i>:N) resistive memory with a large ON/OFF ratio of 10⁶ at a low read voltage of 0.5 V is proposed. The AlO_<i>x</i>:N resistive switching (RS) layer is fabricated using a two-stage thermal oxynitridation process of an evaporated Al film. The Al/AlO_<i>x</i>: N/n^&#x002B;-Si device shows write-once&#x2013;read-many-times (WORM) characteristics and the writing operation is voltage-polarity-independent. The resistance states can be repeatably read <inline-formula> <tex-math notation="LaTeX">$10^{4}\times $ </tex-math></inline-formula> and the data retention time is over 10⁴ s. A high read-disturb immunity is also observed for over 10⁴ s. Data retention and read-disturb characteristics measured at 85 &#x00B0;C predict a ten-year lifetime of the device. The carrier transport and the RS mechanisms are studied and illustrated.

Cryogenic Performances Comparisons Among Si MOSFET, SiC MOSFET, Cascode GaN, and GaN Devices

Cryogenic power electronics is an emerging technology to achieve high efficiency and high power density. As the key element of the power electronics system, the device performance should be evaluated under cryogenic temperatures. To demonstrate the differences between different materials and technologies, cryogenic temperature performance comparisons among silicon (Si) metal–oxide–semiconductor field-effect transistor (MOSFET), Si insulated-gate bipolar transistor (IGBT), silicon carbide (SiC) MOSFET, Cascode gallium nitride (GaN), and GaN high-electron-mobility transistor (HEMT) from different perspectives are made, which includes on-state resistance, threshold voltage, turn-on and turn-off times, turn-on and turn-off switching losses. The normalized values are adopted and results are drawn in the same pictures to demonstrate the differences. The results demonstrate that traditional Si devices have better performances under low temperatures. The SiC MOSFET is not suitable for cryogenic applications due to its increased on-state resistance and switching loss. Cascode GaN and GaN HEMT are promising candidates for cryogenic applications with reduced conduction loss and switching loss.

Implementation of the IEC TS 60904-1-2 Measurement Methods for Bifacial Silicon PV Devices

Bifacial crystalline Silicon (Si) photovoltaic (PV) devices are attracting considerable interest from manufacturers and the market since they can enhance the performance in comparison with traditional monofacial PV devices. Technical specification IEC TS 60904-1-2 was published in 2019 and proposes several characterization methods for bifacial PV device testing based on single-side, double-sided and natural sunlight illumination. This article analyses the advantages, disadvantages, the suitability and the feasibility of the different methods and compares the electrical performance obtained by the proposed approaches at the European Solar Test Installation for the testing of bifacial Si devices. Deviations in <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> below 0.9% for the different testing methods under test was obtained except for the double-source approach with a rear reflector (2.59%) where the measurement of the rear irradaince influence the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <u>P</u> </i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> .

Single event burnout sensitivity of SiC and Si

Exposure to ionizing radiation has the potential to catastrophically modify the operation, and destroy, electronic components in microseconds. The electrification of aircraft necessitates the need to use the most power dense and lowest loss semiconductor devices available, and the increasing supply voltages results in extremely high electric fields within the devices. These conditions create the worst case environment for the Single Event Effect (SEE), the instantaneous alteration in device response after high energy particle interaction, with a destructive form of SEE, the single event burnout (SEB), resulting in total failure of the device with potentially explosive consequences. To enable circuits to operate with these high supply voltages, SiC is rapidly becoming the semiconductor of choice. However, the radiation response of SiC power devices during operation is unknown. Here we show that SiC offers a 60% reduction in cosmic ray sensitivity in comparison to Si devices with an equivalent voltage rating. The data show that Si fails when subjected to a heavy ion impact with Linear Energy Transfer (LET) equivalent to 0.2% of the silver ions commonly used for SEE testing. In total contrast, we show that SiC does not exhibit failure during exposure to any heavy ion LET up to values three times greater than those commonly used in testing at any bias up to 99% of the breakdown voltage. The data show that SiC is a robust material and therefore has the potential to replace Si as the material of choice for high reliability avionic applications, as it far exceeds the performance of Si in cosmic ray environments, facilitating significant advances in the electrification of aircraft to be made in the near future.

High-voltage SiC power devices for improved energy efficiency.

Silicon carbide (SiC) power devices significantly outperform the well-established silicon (Si) devices in terms of high breakdown voltage, low power loss, and fast switching. This review briefly introduces the major features of SiC power devices and then presents research works on breakdown phenomena in SiC pn junctions and related discussion which takes into account the energy band structure. Next, recent progress in SiC metal-oxide-semiconductor field effect transistors, which are the most important unipolar devices, is described with an emphasis on the improvement of channel mobility at the SiO2/SiC interface. The development of SiC bipolar devices such as pin diodes and insulated gate bipolar transistors, which are promising for ultrahigh-voltage (>10 kV) applications, are introduced and the effect of carrier lifetime enhancement is demonstrated. The current status of mass production and how SiC power devices can contribute to energy saving are also described.

Low-temperature characteristics of resistive switching memory devices based on reduced graphene oxide-phosphor composites toward reliable cryogenic electronic devices

Low-temperature electronic devices are indispensable for quantum computing and space exploration applications. However, developing memory devices that are an integral part of the control circuits of low-temperature electronic devices is highly challenging. The electrical conductivity of semiconducting materials drops at low temperatures, leading to large variations in SET/RESET voltages. A strategy for the efficient operation of nonvolatile memory devices at low temperatures should be developed. This study investigated the low-temperature resistive switching characteristics of reduced graphene oxide-phosphor composites (GPs). At cryogenic temperatures, the fabricated ITO/GP/Si3N4/p++Si device exhibited a reliable and reproducible bipolar resistive switching performance. The SET/RESET voltages of the devices remained almost constant at all temperatures ranging from 77 to 300 K. The performance of the devices was further investigated by illuminating the devices with blue laser light. The SET/RESET voltages were considerably reduced through light illumination, which is correlated to the lowering of the barrier height at the Si3N4/p++Si interface and enhanced photoconductivity in the GP film. Our studies suggest that light illumination can be a promising tool for investigating issues in ReRAM devices and improving device performance in dark conditions.

Mathematical Modeling of EMI Spectrum Envelope Based on Switching Transient Behavior

Compared with Si devices, wide bandgap (WBG) devices will cause more serious electromagnetic interference (EMI) problems due to their fast switching speeds. In order to better compare and predict their EMI, this article proposes an improved mathematical modeling method to calculate the EMI spectrum envelope. It is based on an accurate time-domain decomposition of switching transient behavior together with a frequency-domain calculation. Detailed EMI spectrum envelope analytic expressions are derived with full consideration of Miller platform (MP), reverse conduction (RC), and ringing effects, while traditional calculation mainly focused on <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">du/dt</i> . The proposed mathematical modeling method has been applied to Si, silicon carbide (SiC), and gallium nitride (GaN) devices, respectively, and verified by comparing calculated and simulated results. In order to further verify this method, double-pulse test circuits of Si, SiC, emode GaN, and cascade GaN are built, and CM and DM EMI are also compared. The result reveals that, compared with Si devices, the MP, RC, and ringing effects of WBG devices have more serious effects on EMI.

Pressureless Sintered-Silver as Die Attachment for bonding Si and SiC Chips on Silver, Gold, Copper, and Nickel Metallization for Power Electronics Packaging: The Practice and Science

Low-temperature silver (Ag) sintering is emerging as a cutting-edge die-attach technology for power electronics packaging. However, the industry still has concerns about completely accepting this technology. One of the reasons is a lack of knowledge about the mechanism and process of sintered silver bonding on various metallization. Before, we reported a preliminary assessment of the die-shear strength and microstructures of Si dummy device attached on Ag, Au, and Cu metallization. This research will go deeper into the practice and science of attaching Si and SiC devices with sintered-Ag on substrates with up to seven most widely used metallizations, including electroplated Ag, Ni/Au, and Ni, electroless-plated Ni(P)/Ag, Ni(P)/Au, and Ni(P), and native Cu on DBC substrate. All sintered-Ag die-attach were pressureless in the air at temperatures ranging from 220 °C to 300 °C. The mechanical, electrical, and thermal parameters, as well as the microstructural analyses, were assessed. The purpose of this research is to gain a better understanding by: 1) discussing effects of devices and substrate metallizations on the mechanical, electrical, and thermal characteristics; 2) reviewing fundamental mechanisms of interfacial adhesion for sintered-Ag bonding, and 3) providing practical considerations for developing Si and SiC sintered-Ag die-attaching profiles on the widely used substrate metallization.