Abstract
An aluminum oxynitride (AlO<sub><i>x</i></sub>:N) resistive memory with a large ON/OFF ratio of 10<sup>6</sup> at a low read voltage of 0.5 V is proposed. The AlO<sub><i>x</i></sub>:N resistive switching (RS) layer is fabricated using a two-stage thermal oxynitridation process of an evaporated Al film. The Al/AlO<sub><i>x</i></sub>: N/n<sup>+</sup>-Si device shows write-once–read-many-times (WORM) characteristics and the writing operation is voltage-polarity-independent. The resistance states can be repeatably read <inline-formula> <tex-math notation="LaTeX">$10^{4}\times $ </tex-math></inline-formula> and the data retention time is over 10<sup>4</sup> s. A high read-disturb immunity is also observed for over 10<sup>4</sup> s. Data retention and read-disturb characteristics measured at 85 °C predict a ten-year lifetime of the device. The carrier transport and the RS mechanisms are studied and illustrated.
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