Implementation of the electron track-structure mode for silicon into PHITS for investigating the radiation effects in semiconductor devices

Abstract

In order to elucidate the mechanism of radiation effects in silicon (Si) devices, such as pulse-height defects and semiconductor soft errors, we developed an electron track-structure model dedicated to Si and implemented it into particle and heavy ion transport code system (PHITS). Then, we verified the accuracy of our developed model by comparing the ranges and depth-dose distributions of electrons in Si obtained from this study with corresponding experimental values and other simulated results. As an application of the model, we calculated the mean energies required to create an electron–hole pair in crystalline Si. Our calculated result agreed with the experimental data when the threshold energy for generating secondary electrons was set to 2.75 eV, consistent with the corresponding data deduced from past studies. This result suggested that the improved PHITS can contribute to the precise understanding of the mechanisms of radiation effects in Si devices.