Semiconductor Optoelectronic Devices Research Articles

Zeolite framework silicon allotropes with direct band gap

It is a significant issue in the field of semiconductor devices and optoelectronic devices to find silicon allotropes with high mobility, direct band gap and high light absorption to replace traditional diamond silicon (d-Si). By constructing a zeolite framework, fifteen silicon allotropes with a direct band gap of 0.47–1.66 eV were screened from hundreds of zeolite framework silicon allotropes by ab initio calculations. The crystal structures, stability, effective mass, mechanical, electronic and optical properties were comprehensively studied. Compared with diamond silicon, several allotropes showed easy doping, low carrier effective mass and high absorption of the solar spectrum, which indicate promising candidates for adoption in photovoltaic applications.

DETERMINATION OF EFFICIENT OPTICAL SOURCES OF AIR PROPAGATION FOR FISHERIES BIOPHYSICAL DEVICES

From the analysis of the literature, it is known that agricultural pest control devices designed to combat insects or for fishing attract flying insects, the growth of functional systems of Fish and fish larvae in one norm plays an important role in the development of light rays of optical radiation sources. Instruments with incandescent lamp, fluorescent, halogen or light-emitting semiconductor optoelectronic irradiators are widely used as sources of optical radiation in this area. When creating agricultural devices from them, light-emitting semiconductor optoelectronic devices are considered to withstand competition with performance, energy efficiency and other physical characteristics. In connection with these, the research methods and results of the study on the distribution of semiconductor optoelectronic irradiators in the air and aqueous medium as well as the spectral characteristics are described in this work.

Crystal‐Phase Controlled Epitaxial Growth of NbNx Superconductors on Wide‐Bandgap AlN Semiconductors

AbstractThe structural similarity between NbNx and AlN facilitates the integration of superconductors into semiconductor optoelectronic devices. The abrupt interface between wide‐bandgap AlN and superconducting NbNx is essential for future nitride quantum devices, such as Josephson junction‐based quantum bits. In this study, the fundamental properties of NbNx epitaxially grown at various temperatures on atomically flat AlN/sapphire template substrates are investigated. It is found that with increasing epitaxial growth temperature, the nitrogen content of NbNx films grown on AlN decreases, resulting in a change in crystal structure from δ‐ to β‐ via ε‐ and γ ‐type. Microstructural analysis reveals that NbNx thin films epitaxially grown at high temperatures crystallize into a pure hexagonal β‐type and have atomically flat surface and the same in‐plane lattice constant as AlN. The technology for growing high‐purity NbNx films with flat interfaces and surfaces on AlN can contribute to the integration of nitride semiconductors and superconductor hybrid devices.

Direct Z‐Characteristic Observation and Efficiency Improvement in Organic Solar Cells with Ethylenediamine Regulating the Unconventional Energy‐Level Alignment

According to the previous study, a bilayer organic photovoltaic with unconventional energy‐level alignment has been studied. Unlike the donor–acceptor system, this kind of structure has the potential to produce a high open‐circuit voltage (V OC) device and provides another method to realize high‐power conversion efficiency in organic solar cells. However, the V OC of the device is not high enough, and there is no direct observation of the Z‐characteristic. Herein, the device performance is improved according to the strategy provided in the latest report. With ethylenediamine regulating the interface, the V OC and short‐circuit current are improved from 0.59 to 0.77 V and 0.9 to 1.9 mA cm−2, respectively. The overall efficiency increases by 280%. The enhancement and direct observation of Z‐characteristics are observed. Considering the efficiency improvement brought by Z‐characteristic enhancement in this work, combined with the previous work, the theoretical efficiency limitation is 22.5% under a low light intensity and 30% under a high light intensity. This article supports the previous work, shows that the Z‐characteristic device has very broad optimization potential, provides a method for the fabrication of high efficiency and high V OC devices, and also provides a reference for other semiconductor optoelectronic devices.

Investigation of sputtering pressure on physical properties of CuO films and the electrical properties-temperature relationship of CuO films and p-CuO/n-GaN heterojunction

CuO had huge application prospects in the fields of semiconductor optoelectronic devices. However, the preparation of high-quality CuO films was still an urgent problem to be solved. Herein, we prepared CuO films at different sputtering pressures (0.6–2.1 Pa) by magnetron sputtering technology. The experiment results showed that the sputtering pressure had an obvious effect on the optical properties, structure, morphology and electrical properties of CuO films. It showed that relatively better CuO films could be prepared at 1.6 Pa. Moreover, Hall effect indicated that the change of ambient temperature had an obvious effect on the resistivity and carrier concentration of CuO films. Correspondingly, the p-CuO/n-GaN heterojunction device was fabricated, and the relationship between carrier transport characteristics and ambient temperature was studied. Ambient temperature had obvious influence on the turn-on voltage and rectification ratio of the device. This work provided a basis for the practical application of CuO-based optoelectronic devices.

Third-harmonic generation investigated by spherical quantum dot system with Hulthén-Hellmann potential

This paper reports the calculation of the third-harmonic generation related to the electronic state of GaAs/Al0.3Ga0.7As spherical quantum dot under the action of Hulthén-Hellmann potential. This work is carried out in the case of matrix density theory and tunable effective mass, so as to calculate the electronic structure of the system through the diagonalization process. It is worth noting that numerical analysis shows that these third-order responses can be easily controlled by effective mass, quantum dot radius and limiting potential depth. We believe that this phenomenon is of great significance to the development of semiconductor materials and optoelectronic devices.

Guest Editorial Introduction to the Special Issue on Semiconductor Optoelectronic Materials and Devices

This Special Issue of the IEEE Journal of Quantum Electronics on Semiconductor Optoelectronic Materials and Devices is dedicated to Prof. P. Daniel Dapkus and the impact he has had on the development of metal-organic chemical vapor deposition (MOCVD) for the growth and manufacture of advanced photonic devices. Prof. Dapkus has focused his career activities on the research and development of photonic materials and devices including semiconductor lasers, LEDs, solar cells, and detectors. While at Rockwell International, he led the group that demonstrated the potential and viability of MOCVD as the preferred technology for creating and manufacturing photonic devices. Prof. Dapkus, along with his colleagues Prof. Dupuis, Dr. H. Manasevit, and Prof. J. J. Coleman are widely considered to be the leading pioneers in the development of the MOCVD technique. Dapkus’ group at Rockwell International was the first to report lasing in AlGaAs/GaAs double heterostructures at room temperature in 1977. This work along with their demonstration of multiple quantum well laser diodes in 1978 has led to MOCVD becoming the dominant technique for the production of laser diodes and LEDs, along with other key photonic devices. As a Professor at USC, Dapkus’ lab investigated MOCVD fundamental growth mechanisms and selective area growth employing MOCVD. His lab made pioneering contributions to the technology of long-distance fiber-optic lasers, ultra-low-threshold datacom lasers, vertical cavity surface-emitting lasers, and photonic integrated circuits. In particular this work led to strained quaternary quantum wells became the preferred design in 1.3- and 1.55- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \textrm {m}$ </tex-math></inline-formula> laser diodes. The MOCVD technology and the quantum well material designs that were demonstrated with it now are dominant in the fabrication of devices for fiber-optic systems, data communications, facial recognition, space solar cells, solid-state lighting, and cell phone amplifiers.

Dopant compensation in p-type doped MAPb1−xCuxI3 alloyed perovskite crystals

Tuning the optical and electrical properties of semiconductors by designed doping is the basis of most energy-related semiconductor optoelectronic devices. In this Letter, we report the dopant compensation effect of P-type doped MAPb1−x CuxI3 alloyed perovskite crystals. MAPb1−xCuxI3 single crystals were prepared by the inverse temperature crystallization method using cupric chloride (CuCl2) as the doping source. By XRD, XPS, STEM, and photoluminescence (PL) spectra analyses, we demonstrate that the doped cupric (Cu2+) ions can partially substitute lead (Pb2+) ions and form Cu–Pb based crystal semiconductor alloys of MAPb1−xCuxI3 with tunable bandgap by controlling the Pb/Cu ratio. More detailed XPS analysis of the doped crystal shows that the Cu2+ ions in MAPb1−xCuxI3 are partially reduced by I− ions, and the coexistence of two valence states of Cu species (Cu2+ and Cu+) was observed in the doped crystals. Hall results of MAPb1−xCuxI3 semiconductors show that the presence of reduced Cu+ ions impels the change of conductive type from weak N-type to P-type obviously, while the resistivity of doped MAPb1−xCuxI3 increases significantly from 104 to 107 Ω cm. The defect-related optical fingerprints of cupric doped crystals were investigated in detail by temperature-dependent PL spectroscopy. The pristine MAPbI3 perovskite crystal exhibits intrinsic donor bound exciton (D0X) luminescence at low temperature (10 K), while the doped MAPb1−xCuxI3 perovskites exhibit donor-acceptor or bound exciton (A0X) peaks related to a Cu+ dopant in sequence with the increase in the Cu ion content. These results indicate that the doping of Cu2+/+ ions into the MAPb1−xCuxI3 crystal not only changes the semiconductor bandgap but also causes the dopant compensation.

Research on Photoelectric Detection Performance Based on Pb Se Quantum Dots

Quantum dot materials have the advantages of low cost, wide spectral response and good photostability, and are widely used in optoelectronic fields such as light-emitting diodes and photodetectors. Quantum dots are the key materials for the next generation of new semiconductor optoelectronic devices. The direct integration of nano-quantum dots with silicon-based materials can simplify the fabrication process of optoelectronic devices. The environmental stability of lead selenide (PbSe) quantum dots is poorer than that of lead sulfide (PbS) quantum dots, which limits its application in optoelectronic devices. In this paper, we combine lead selenide quantum dots with silicon-based photovoltaic junction field effect transistors, and introduce halides in the synthesis process to improve the stability of quantum dots in air. We analyze and study the performance of this new type of near-infrared quantum dot photodetector, and study the influence of factors such as channel area and quantum dot size on the performance of the detector, which provides ideas for further optimizing the photodetection performance.

Anharmonic phonon coupling and decay of optical phonons in polycrystalline CdSe thin films

The lifetime of longitudinal optical (LO) phonon is a key parameter that significantly affects the performance of semiconductor optoelectronic devices. Herein, in situ temperature-dependent resonance Raman scattering experiment has been performed to study the phonon anharmonicity in sputter-deposited CdSe thin films. Strong multiphonon scattering processes involving 1LO + TO, 2LO-TO, 2LO + TO, 2LO+ E2low and TO-E2low are well resolved and allow us to investigate the anharmonic decay of 1LO, 2LO, and 1LO + TO phonon modes. Fundamental 1LO and its overtone 2LO phonon modes asymmetrically decay into a pair of transverse optical (TO) and transverse acoustical (TA) phonon at the ‘A’ point of the Brillouin zone along Γ−A direction. With increasing temperature, enhanced anharmonic phonon coupling and phonon decay led to an almost linear decrease in the wavenumber of both modes and a nearly linear increase in their full-width half maxima. The composite 1LO + TO mode exhibited a ∼ 30% faster decay rate compared to the decay rate of the fundamental 1LO phonon mode.

Mechanism of Photocurrent Degradation and Contactless Healing in p-Type Mg-Doped Gallium Nitride Thin Films.

Light-induced degradation (LID) phenomenon is commonly found in optoelectronics devices. Self-healing effect in halide lead perovskite solar cells was investigated since the electrons and holes in the shallow traps could escape easily at room temperature. However, the degradation in the semiconductors could not easily recover at room temperature, and many of them needed annealing at temperatures in the several hundreds, which was not friendly to the integrated optoelectronic semiconductor devices. To solve this problem, in this work, LID effect of photocurrent in p-type Mg-doped gallium nitride thin films was investigated, and deep defect and vacancy traps played a vital role in the LID and healing process. This work provides a contactless way to heal the photocurrent behavior to its initial level, which is desirable in integrated devices.

Photoelectric Computer Simulation of Cu2O/WO3 Composite Semiconductor Materials

Cuprous oxide (Cu2O) is a P-type semiconductor material with a narrow forbidden band and shows good optoelectronic performance. Due to the easy composition of photo-induced electrons and holes in Cu2O, the photocatalytic activity is reduced, so it is necessary to reduce the composition of photo-induced electrons and holes in Cu2O to improve its optoelectronic performance. In this work, nano-Cu2O and Cu2O/tungsten trioxide (WO3) composite semiconductor films were first prepared by anodization. Nano-Cu2O/WO3 composite semiconductors can be obtained in both alkaline solution and acidic solution. Among them, the granular Cu2O/WO3 composite film can be obtained by annealing treatment at 370 °C after anodization at 10 V voltage in the alkaline solution, and its photocurrent density is 50 times that of pure Cu2O film. The flaky Cu2O/WO3 composite film can be obtained by annealing treatment at 400 °C after anodization at 0.8 V voltage in the acid solution, and its photocurrent density is 17 times that of pure Cu2O film. The Cu2O/WO3 composite film prepared in the acid solution is taken to peel off the single-layer film by the micromechanical exfoliation method, and to construct the semiconductor optoelectronic device based on single-layer Cu2O/WO3 by photolithography micromachining technology. The nano-film device is irradiated with different wavelengths of laser light, and it is found that Cu2O/WO3 shows excellent photosensitivity. In addition, the current changes greatly under blue-violet light irradiation and changes slightly under red light irradiation. The field effect transistor based on single-layer Cu2O/WO3 is constructed, and its field effect transport performance is affected by the adsorption of water molecules. The results reveal that with the increase of relative humidity, the conductivity and switching voltage of the optoelectronic device increase accordingly.

Extending plasmonic response to the mid-wave infrared with all-epitaxial composites.

Highly doped semiconductor "designer metals" have been shown to serve as high-quality plasmonic materials across much of the long-wavelength portion of the mid-infrared. These plasmonic materials benefit from a technologically mature semiconductor fabrication infrastructure and the potential for monolithic integration with electronic and photonic devices. However, accessing the short-wavelength side of the mid-infrared is a challenge for these designer metals. In this work we study the perspectives for extending the plasmonic response of doped semiconductors to shorter wavelengths by leveraging charge confinement, in addition to doping. We demonstrate, theoretically and experimentally, negative permittivity across the technologically vital mid-wave infrared (3-5 μm) frequency range. The semiconductor composites presented in our work offer an ideal material platform for monolithic integration with a variety of semiconductor optoelectronic devices operating in the mid-wave infrared.

MOCVD growth of MgGa2O4 thin films for high-performance solar-blind UV photodetectors

Epitaxial MgGa2O4 thin films with a bandgap of 5.18 eV were grown on the c-plane sapphire substrate by using metal organic chemical vapor deposition. The structure, optical, electronic, and optoelectronic properties of MgGa2O4 thin films have been investigated before and after high-temperature annealing in an oxygen or nitrogen atmosphere. In particular, the O2-annealed MgGa2O4 thin film reveals a high crystalline quality and a low concentration of oxygen vacancies. Moreover, a quick response speed (tr = 20 ns, td = 400 ns), a low dark current (∼17 pA at 10 V), and a high UV/Visible rejection ratio (&amp;gt;105) can be demonstrated in the O2-annealed MgGa2O4 photodetector, indicating the excellent solar-blind ultraviolet (SBUV) photodetection characteristics. The effect of annealing atmosphere on the photoelectric properties of the film and its physical mechanism were studied. This research provides an effective way to realize high-performance SBUV photodetectors and opens up the application of MgGa2O4 spinel in the field of semiconductor optoelectronic and microelectronic devices.

Recent advances of crosslinkable organic semiconductors in achieving solution-processed and stable optoelectronic devices

Crosslinkable organic semiconductors in optoelectronic devices have attracted extensive attention due to the outstanding advantages of strong solvent resistance and stable film morphology.

Spin transport characteristics and photoelectric properties of magnetic semiconductor NiBr&lt;sub&gt;2&lt;/sub&gt; monolayer

Magnetic semiconductor materials have potential applications in spintronic devices. In this work, some nano-device structures based on the magnetic semiconductor NiBr&lt;sub&gt;2&lt;/sub&gt; monolayer (NiBr&lt;sub&gt;2&lt;/sub&gt;-ML) are designed, their spin-resolved transport and photoelectric properties are studied by using density functional theory combined with non-equilibrium Green’s function method. The results show that both the NiBr&lt;sub&gt;2&lt;/sub&gt;-ML PN-junction diodes and sub-3 nanometer PIN-junction field-effect transistors (FETs) exhibit the significant rectification and spin filtering effects in either the armchair or the zigzag direction. The gates can obviously tune the electron transmission of the PIN-junction FETs. The current is significantly suppressed with the increase of gate voltage. In addition, NiBr&lt;sub&gt;2&lt;/sub&gt;-ML has a strong response to the blue and green light, thus its phototransistor can generate a strong photocurrent under the irradiation of blue and green light. The research results in this paper reveal the multifunctional characteristics of NiBr&lt;sub&gt;2&lt;/sub&gt;-ML, which provides an important reference for the application of nickel-based dihalides in semiconductor spintronic devices and optoelectronic devices.

ДОСЛІДЖЕННЯ ФІЗИЧНИХ ПРОЦЕСІВ І РОЗРОБКА МЕТОДІВ РАДІАЦІЙНОЇ МОДИФІКАЦІЇ ПАРАМЕТРІВ НАПІВПРОВІДНИКОВИХ ПРИЛАДІВ ОПТОЕЛЕКТРОНІКИ

Operation of solid-state electronics products in the field of ionizing radiation can significantly change their properties, contributing to their premature destruction or loss of technical characteristics necessary for normal operation of the equipment. The changes observed in this case are caused by a number of specific processes discussed above. Distinguish between reversible and irreversible changes. Irreversible (residual) include radiation changes that remain partially or completely after the termination of exposure. The magnitude of radiation changes is determined by the amount of energy absorbed by materials when interacting with radiation, as well as the rate at which this energy is transferred to them. It depends on the type of radiation and its parameters (energy spectrum, flux density, intensity, etc.), as well as on the nuclear-physical characteristics of materials. Criteria for the radiation resistance of photodetectors. The criterion for the parametric reliability of photodetectors is formulated on the basis that the object under consideration degrades its parameters gradually, both with an increase in the duration of exposure and the dose of radiation. The purpose of the photodetectors, the imposed restrictions on the criterion of their performance, as well as the physics of the effect of radiation, allow us to consider photodetectors as an object functioning under noise conditions. This allows statistical analysis methods to be applied. With this approach, we can use a well-studied mathematical apparatus for testing statistical hypotheses. Three criteria of radiation resistance of photodetectors are proposed. The first is the signal-to-noise ratio in the interpretation of sufficient statistics, the second is the criterion for the average detection error (Kotelnikov's criterion), and the third is the Bayesian risk criterion. This article examines the physical processes and the development of methods for radiation modification of the parameters of semiconductor optoelectronic devices.

The effect of parabolic potential on ground state energy and vibration frequency of magnetopolaron in asymmetric Gaussian potential quantum wells

Anisotropy parabolic potential (APP) effects on ground state (GS) energy [Formula: see text] and the vibration frequency (VF) [Formula: see text] of weak-coupled magnetopolaron (MP) in asymmetric Gaussian quantum wells (AGQWs) were investigated using the linear combination operator and unitary transformation method. The obtained results showed that [Formula: see text] and [Formula: see text] were increased by increasing the barrier height [Formula: see text] of AGQWs as well as transverse and longitudinal confined strengths [Formula: see text] and [Formula: see text] of APP and decreased with increase in the asymmetric Gaussian confinement potential (AGCP) range [Formula: see text] and transverse and longitudinal effective confined lengths [Formula: see text] and [Formula: see text] of APP. Thus, the GS energy and VF of MP could be changed by adjusting the confinement parameters of the APP and AGCP. The study of quantum wells’ semiconductor materials has broad potential applications in semiconductor lasers, optoelectronic devices and quantum information.

Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment

We have demonstrated the role of thermal annealing treatment after InGaN quantum well layer growth to improve the interface morphology and luminescence properties of InGaN/GaN multiple quantum wells (MQWs). X-ray diffraction and transmission electron microscope analyses reveal that better structural properties are achieved by appropriately increasing the ramp-up time as well as relatively decreasing the annealing temperature as the interface quality of MQWs is improved. Moreover, the photoluminescence (PL) and electroluminescence (EL) measurements confirm the higher crystal quality and optical properties of InGaN/GaN MQWs. The reason may be the redistribution of indium atoms improves the homogeneity of localized states in MQWs, and the In-rich clustering behavior is obviously alleviated. This annealing method is feasible and can lead to obtaining high-performance semiconductor optoelectronic devices.

A study of the influence of the base thickness on photoelectric parameters of silicon solar cells with the new TCAD algorithms

he Sentaurus TCAD software package is widely used in the modeling of semiconductor optoelectronic devices. The main part of simulating solar elements is creating a correct geometric model. A geometric model can be built using the SDE module in two different ways, i.e. by writing code or using standard shapes in a graphical environment. Creating complex structures using simple shapes is time-consuming and labour intensive. Therefore, this paper provides data on how to develop algorithms using geometric models of complex structural solar cells. A universal algorithm has been developed for creating a geometric model of solar cells with a sinusoidal p-n junction and a rear multiple structure. Using these algorithms, it is possible to create geometric models of various solar cells from simple to complex structures. By applying this algorithm, the authors studied the dependence of photoelectric parameters of the p-n and n-p junction silicon solar cells on their thickness in order to find the optimum thickness for both structures. It has been found, that the optimum thickness was equal to 256 μm for p-n junction and 75 μm for n-p junction silicon solar cell. The maximum efficiency of p-n junction silicon solar cell is 1.4 times greater than that of n-p junction solar cell in their optimum thickness.