Abstract
Quantum dot materials have the advantages of low cost, wide spectral response and good photostability, and are widely used in optoelectronic fields such as light-emitting diodes and photodetectors. Quantum dots are the key materials for the next generation of new semiconductor optoelectronic devices. The direct integration of nano-quantum dots with silicon-based materials can simplify the fabrication process of optoelectronic devices. The environmental stability of lead selenide (PbSe) quantum dots is poorer than that of lead sulfide (PbS) quantum dots, which limits its application in optoelectronic devices. In this paper, we combine lead selenide quantum dots with silicon-based photovoltaic junction field effect transistors, and introduce halides in the synthesis process to improve the stability of quantum dots in air. We analyze and study the performance of this new type of near-infrared quantum dot photodetector, and study the influence of factors such as channel area and quantum dot size on the performance of the detector, which provides ideas for further optimizing the photodetection performance.
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