ДОСЛІДЖЕННЯ ФІЗИЧНИХ ПРОЦЕСІВ І РОЗРОБКА МЕТОДІВ РАДІАЦІЙНОЇ МОДИФІКАЦІЇ ПАРАМЕТРІВ НАПІВПРОВІДНИКОВИХ ПРИЛАДІВ ОПТОЕЛЕКТРОНІКИ

Abstract

Operation of solid-state electronics products in the field of ionizing radiation can significantly change their properties, contributing to their premature destruction or loss of technical characteristics necessary for normal operation of the equipment. The changes observed in this case are caused by a number of specific processes discussed above. Distinguish between reversible and irreversible changes. Irreversible (residual) include radiation changes that remain partially or completely after the termination of exposure. The magnitude of radiation changes is determined by the amount of energy absorbed by materials when interacting with radiation, as well as the rate at which this energy is transferred to them. It depends on the type of radiation and its parameters (energy spectrum, flux density, intensity, etc.), as well as on the nuclear-physical characteristics of materials. Criteria for the radiation resistance of photodetectors. The criterion for the parametric reliability of photodetectors is formulated on the basis that the object under consideration degrades its parameters gradually, both with an increase in the duration of exposure and the dose of radiation. The purpose of the photodetectors, the imposed restrictions on the criterion of their performance, as well as the physics of the effect of radiation, allow us to consider photodetectors as an object functioning under noise conditions. This allows statistical analysis methods to be applied. With this approach, we can use a well-studied mathematical apparatus for testing statistical hypotheses. Three criteria of radiation resistance of photodetectors are proposed. The first is the signal-to-noise ratio in the interpretation of sufficient statistics, the second is the criterion for the average detection error (Kotelnikov's criterion), and the third is the Bayesian risk criterion. This article examines the physical processes and the development of methods for radiation modification of the parameters of semiconductor optoelectronic devices.