Abstract
Light-induced degradation (LID) phenomenon is commonly found in optoelectronics devices. Self-healing effect in halide lead perovskite solar cells was investigated since the electrons and holes in the shallow traps could escape easily at room temperature. However, the degradation in the semiconductors could not easily recover at room temperature, and many of them needed annealing at temperatures in the several hundreds, which was not friendly to the integrated optoelectronic semiconductor devices. To solve this problem, in this work, LID effect of photocurrent in p-type Mg-doped gallium nitride thin films was investigated, and deep defect and vacancy traps played a vital role in the LID and healing process. This work provides a contactless way to heal the photocurrent behavior to its initial level, which is desirable in integrated devices.
Highlights
Light-induced degradation (LID) phenomenon has been widely observed in solar cells in silicon and halide lead perovskites-based devices and light emitting diodes in metal oxides and metal nitride semiconductor materials, which impedes their application in high performance electrooptical and electronics devices [1–5]
Silicon-based passivated emitter rear contact (PERC) solar cells suffer the LID effect when they are first illuminated by the sunlight in Czochralski-grown p-type Boron doped silicon substrates, which mainly originated from the formation of the boron–oxygen complex [8–10]
This work for degradation of photocurrent devices based light at 808 is nmsuitable was used to light-induced expose the surface of the devices, and the photocurrent on defects electron andlargely hole carrier traps, including leads perovskites, and free holeassisted carrier concentration recovered to the originalhalide condition
Summary
Light-induced degradation (LID) phenomenon has been widely observed in solar cells in silicon and halide lead perovskites-based devices and light emitting diodes in metal oxides and metal nitride semiconductor materials, which impedes their application in high performance electrooptical and electronics devices [1–5]. The mechanism of the degradation and healing of the photocurrent were not proposed clearly in these semiconductors To solve these issues, in this work, ultraviolet light-induced degradation of photocurrent in p-type Mg-doped gallium nitride thin films was investigated, grown by using metal organic chemical vapor deposition (MOCVD). This work for degradation of photocurrent devices based light at 808 is nmsuitable was used to light-induced expose the surface of the devices, and the photocurrent on defects electron andlargely hole carrier traps, including leads perovskites, and free holeassisted carrier concentration recovered to the originalhalide condition.
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