Annealing and diffusion behavior of implanted silver in 6H–SiC has been investigated using Rutherford backscattering spectroscopy (RBS), channeling, Raman spectroscopy and scanning electron microscopy (SEM) techniques. Silver (109Ag+) ions with an energy of 360keV were implanted in SiC to a fluence of 2×1016cm−2 at room temperature (23°C), 350 and 600°C. After implantation the samples were annealed at temperatures up to 1400°C. The results revealed that implantation at room temperature created an amorphous layer of about 270nm from the surface while implantation at 350 and 600°C retained a crystalline structure with more damage created for 350°C implantation compared to 600°C. Diffusion of implanted Ag accompanied by loss from the surface started at 1300°C in the amorphous SiC with no diffusion observed in the crystalline SiC. A new model explaining this diffusion of silver accompanied silver loss is presented.