Incorporation of hydrogen in CuInSe2: Improvements of the structure

Abstract

CuInSe2 single crystals were ion implanted with a dose of 3 × 1016 cm−2 by 2.5 keV H+ at 150 and 250 °C. Before and after the implantation the crystals were analyzed by Rutherford backscattering/channeling (RBS/C) along the 〈112〉 axis using 2 MeV He+. The RBS/C spectra indicate that the implantation at 150 °C introduces a layer of radiation damage, whereas after the implantation at 250 °C no structural deterioration of the lattice can be seen. Quite the contrary, the RBS/C spectra reveal a considerable decrease in the dechanneling parameters suggesting improvements in the lattice structural quality attributed to the incorporation of hydrogen.