Abstract

We have studied the structural change of defects caused by annealing Al-implanted SiC crystals at 1600 °C using channeling Rutherford backscattering spectrometry (RBS) and synchrotron white beam x-ray topography. Comparison of the RBS spectra before and after annealing showed damage recovery, i.e. a drastic decrease in interstitial atoms. X-ray topography revealed that the size of the white elliptical contrast in micropipe images was decreased by annealing. This result suggested that excess interstitial atoms near the micropipes flowed into their internal walls, and consequently, shrinkage of their hollow cores occurred during annealing.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.