Abstract
The lattice expansion in InAs single crystal, due to ion-implantation by 80 keV Be ions with the implantation fluencies ranging from 1 × 10 12 to 2 × 10 16 cm −2, has been investigated by using high resolution X-ray diffraction (HRXRD), transmission electron microscopy (TEM), and Rutherford backscattering spectrometry/channeling (RBS/C). In order to clarify the evolution of damage buildup, the nonlinear maximum perpendicular strain ε m as a function of the Be fluence was obtained and analyzed. The curve of ε m vs. Be fluence is subdivided into five regions, each having a different damage accumulation behavior. The involved probable mechanisms of microstructural variation in InAs due to Be implantation of different fluencies are analyzed in detail.
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