Abstract
A series of (Ni61Fe39) x (Al2O3)1−x films were prepared using the magnetron sputtering technique. The maximum of saturated Hall resistivity 4.06 μΩ⋅cm was observed in (Ni61Fe39)60(Al2O3)40 nanogranular film at room temperature, which was about two orders larger than that of pure ferromagnetic metallic films. For the first time, the composition in the atomic fraction at the quantum percolation threshold was accurately characterized by the Rutherford backscattering (RBS) channelling technique in order to substantiate the newly metal-insulator fraction of percolation threshold in the Giant Hall Effect. It also was identified from the TEM image of an as-deposited sample that this large enhancement of the Hall resistivity coefficient was interrelated with the percolation threshold. With a different annealing temperature (T A ) up to 300 °C , the saturated Hall resistivity of (Ni61Fe39)60(Al2O3)40 granular film decreased only a little, which showed its good thermal stability for potential application.
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