Design Of RF MEMS Switch Research Articles

Design and simulation of a novel RF MEMS switch anchored by springs three-levelly

Design and simulation of a novel RF MEMS switch anchored by springs three-levelly

Design of a graphene RF MEMS switch for X–V band

In this paper, we propose a graphene RF MEMS switch design for the X–V band. The structural parameters of graphene, such as the number of layers, the thickness of the medium and the material of the upper electrode, were analyzed by HFSS simulation software. The drive voltage of the switch was found to be as low as 3 V. The switching time is 320 ns. The highest isolation is −47.46 dB@8 GHz; In the 2–56 GHz band, the isolation is better than −20dB. Moreover, we carry out the process design of the switch, including key techniques such as graphene beam fabrication and graphene transfer, it shows that the switch has a great application prospect in the future.

Design and analysis of a novel low RF MEMS switch with low pull-in voltage and high capacitance ratio

Design and analysis of a novel low RF MEMS switch with low pull-in voltage and high capacitance ratio

Design and performance analysis of a dual channel RF MEMS switch with separate bias voltage and signal paths for aerospace applications

Design and performance analysis of a dual channel RF MEMS switch with separate bias voltage and signal paths for aerospace applications

Performance Exploration of Uncertain RF MEMS Switch Design with Uniform Meanders

The design of RF-MEMS Switch is useful for future artificial intelligence applications. Radio detection and range estimation has been employed with RF MEMS technology. Attenuators, limiters, phase shifters, T/R switches, and adjustable matching networks are components of RF MEMS. The proposed RF MEMS technology has been introduced in T/R modules, lenses, reflect arrays, sub arrays and switching beam formers. The uncertain RF MEMS switches have been faced many issues like switching and voltage alterations. This study aims in the direction of design, simulation, model along with RF MEMS switching analysis including consistent curving or meandering. The proposed RF MEMS Switch is a flexure form of the Meanders that attain minimal power in nominal voltage. Moreover, this research work highlights the materials assortment in case of beam along with signal-based dielectric. The performance analysis is demonstrated for various materials that have been utilized in the design purpose. Further, better isolation is accomplished at the range of -31dB necessary regarding 8.06V pull-in voltage through a spring constant valued at 3.588N/m, switching capacitance analysis has been found to be 103 fF at ON state and 7.03pF at OFF state and the proposed switch is optimized to work at 38GHz. The designed RF MEMS switch is giving 30% voltage improvement; switching frequency is improved by 21.32% had been attained, which are outperformance the methodology and compete with present technology.

Design and analysis of SP4T RF MEMS switch for satellite applications

Design and analysis of SP4T RF MEMS switch for satellite applications

Design and Fabrication of a Ka Band RF MEMS Switch with High Capacitance Ratio and Low Actuation Voltage.

In this paper a high capacitance ratio and low actuation voltage RF MEMS switch is designed and fabricated for Ka band RF front-ends application. The metal-insulator-metal (MIM) capacitors is employed on a signal line to improve the capacitance ratio, which will not degrade the switch reliability. To reduce the actuation voltage, a low spring constant bending folding beam and bilateral drop-down electrodes are designed in the MEMS switch. The paper analyzes the switch pull-in model and deduces the elastic coefficient calculation equation, which is consistent with the simulation results. The measured results indicated that, for the proposed MEMS switch with a gap of 2 μm, the insertion loss is better than −0.5 dB and the isolation is more than −20 dB from 25 to 35 GHz with an actuation voltage of 15.8 V. From the fitted results, the up-state capacitance is 6.5 fF, down-state capacitance is 4.3 pF, and capacitance ratios is 162. Compared with traditional MEMS capacitive switches with dielectric material Si3N4, the proposed MEMS switch exhibits high on/off capacitance ratios of 162 and low actuation voltage.

Design, Simulation and Analysis of a Slotted RF MEMS Switch

Design, Simulation and Analysis of a Slotted RF MEMS Switch

Analytical modelling, design optimisation and numerical simulation of a variable width cantilever beam MEMS switch

ABSTRACT Pull-in potential of electrostatic actuation ohmic cantilever beam type RF MEMS switch is lowered by reducing stiffness constant of its cantilever beam. However, this design objective is highly interlinked to major criteria like its mechanical, RF performance parameters, materials used and fabrication constraints. The purpose of this study is to address the design methodology of such interdisciplinary complex phenomenon to obtain global optimum solution. A variable width cantilever beam design is proposed to lower its pull-in potential. The design optimisation methodology adopted in this study uses analytical model of stiffness constant, major interlinked criteria based on cantilever beam profile and geometric dimensions of the switch. This methodology is further identified as a multivariable constraint optimisation problem to be solved using evolutionary optimisation algorithm for various geometric dimensions of the switch. 3-D modelling, simulation of the optimised device for pull-in potential, mechanical and RF performance parameters is carried out using CAD tools. The results obtained from simulation and analytical models are in agreement. The proposed optimised design opens a new avenue in RF MEMS switch design as it satisfies additional essential performance parameters compared to the results of previous published designs concluding significance of design optimisation methodology adopted in this work.

Design, simulation and analysis of uniform and non-uniform serpentine step structure RF MEMS switch

Design, simulation and analysis of uniform and non-uniform serpentine step structure RF MEMS switch

Performance Comparison Of Shunt Rf Mems Switches

This is an attempt to compare three different shunt configured RF MEMS switches which offers a choice for applications in satellite and antennas. Advanced RF communication domain demands for design and modeling of RF MEMS switch which provides extremely reduced pull-in voltage, better isolation, low insertion loss, and with greater reliability. The proposed work manages with comparison of design modeling and performance of three different shunt configured RF MEMS switches. The proposed shunt configured RF MEMS switches are designed with different dimensions with different meandering techniques with perforations on beam structure helps in reducing the amount of voltage required for actuation of switch which is known as pull-in voltage. Comparative study of three different RF MEMS switches which involves in conducting electromechanical analysis are carried out using COMSOL multi physics tool and electromagnetic analysis are carried out using HFSS tool. Moreover the comparative study involves in comparing the values of pull-in voltage, switching time and capacitance, stress, insertion loss, return loss and isolation of three different RF MEMS switches. Proposed first switch model derives pull-in voltage of 16.9v with the switching time of 1.2µs, isolation of 47.70 dB at 5GHz and insertion loss of 0.0865 dB and return loss of 41.55 dB. Proposed second switch model derives pull-in voltage of 18.5v with the switching time of 2.5µs, isolation of 37.20 dB at 8GHz and insertion loss of 0.1177 dB and return loss of 38.60 dB. Proposed third switch model delivers pull-in voltage of 18.75v with the switching time of 2.56µs, isolation of 44.1552 dB at 8GHz and insertion loss of 0.0985 dB and return loss of 42.1004 dB.

Design and Analysis of a Non-Uniform Meander RF MEMS Switch

This paper aimed to design and analysis of non-uniform meander capacitive shunt RF MEMS switch. The less pull in voltage is obtained in flexure type membrane by proposed RF MEMS Switch. The selection of materials for the beam and dielectric layer is expressed in this paper and also shown the performance depends on materials utilized for the design. The high isolation of -31.15dB actuating at the pull-in voltage of 7.69V with a spring constant of 3.28N/m produced the switch and is obtained by the optimization process. Capacitive contact switches have capability of power handling. The actuated switch state provides an excellent isolation. It shorts the ground by RF signal. MEMS technology is the integration of electrical and mechanical components on single platform i.e. substrate [10]. From the literature, various researchers have proposed different RF MEMS Switch, but still there few challenges on optimization of the Switch for best performance. The electromechanical analysis such as Upstate, Downstate capacitances and stress analysis have been carried out. The performance of the switch is analyzed by taking appropriate materials selected by Ashby’s approach. These optimized dimensions are feasible to fabricate. The substrate height, material for the substrate and coplanar waveguides are used for the impendence matching. For obtaining the less pull in voltage overlapping area is to be increased.

WITHDRAWN: Role of multiple contacts in the performance of DC contact RF MEMS switch

This communication investigates the role of uniform and non-uniform cantilever structures in the design of DC contact RF MEMS switches. The Eigen frequency exploration is performed. The cantilever structure is offering low actuation voltage. Because of multiple contacts, the switch reliability if improved significantly. The height of the cantilever is 1.5 µm and actuation voltage is 5.5 V. The designed DC contact RF MEMS switch is analyzed over the frequency range 0.5–10 GHz. The insertion loss of the switch is −0.2 dB and the isolation loss of the switch is −41 dB to −20 dB. The simulation level switch performance is analyzed using COMSOL and HFSS FEM tools.

Design and analysis of capacitive RF MEMS switch with step structure and meander spring for cellular communication

Design and analysis of capacitive RF MEMS switch with step structure and meander spring for cellular communication

Design and analysis of capacitive RF MEMS switch with step structure and meander spring for cellular communication

An electrostatically actuating capacitive RF MEMS switch with a rare step structure and meander spring is designed and analysed in this work. The materials for the dielectric medium between the RF ...

Design and simulation of RF MEMS switch for use in the millimetre wavelength range and SPDT RF MEMS switch

This article describes in detail the design of a shunt capacitive RF MEMS switch for Ka-frequency band, as well as the design of a single-pole-double-directional RF MEMS switch made on its basis. An electrostatic and electromagnetic analysis was performed using the MATLAB and ANSYS HFSS software package. The switch uses a 1.52 V actuation voltage and 1.3 μs of switching time to move the membrane from the up state to the down state. The operating frequency range of this switch is between 24-34 GHz with isolation of -53 dB at 29 GHz and reflection loss of -0.25 dB for this frequency range. The design of the switch is made on a GaAs substrate with a thickness of 525 μm with a double-sided insulating layer of silicon oxide with a thickness of 2 μm.

Design of a novel step structure RF MEMS switch for K-band applications

In this paper, we have design a proposed step structure RF MEMS switch for K-band applications. The non-uniform meander structure is implemented for both optimized and non-optimized structure and are analyzed to understand the performance characteristics. The simulations are carried out using COMSOL and HFSS and compared to the analytical calculation for validation. The optimized non-uniform meander switch shows a very low pull-in-voltage of 3.82 V an switch is designed to operated only in K-band frequencies with the high isolation of − 54.17 dB at the centre frequency of 22 GHz.

Metal contact RF MEMS switch design for high performance in Ka band

RF/microwave systems require switches to achieve tunability and reconfigurability. MEMS switches have always been a priority due to excellent RF performance (low insertion loss and high isolation). In this work, we present an RF Micro-Electro-Mechanical-System (RF MEMS) series switch that provides insertion loss less than 0.6 dB (on switch) and isolation better than 15 dB (off switch) at 40GHz. The designed switch consists of serpentine arms on the fixed end and two free-moving arms on another end. These free arms have individual contact points to overcome asperity problem during on state. To avoid self-actuation, bumps (0.6um) are used at the bottom side. This electrostatically actuated switch requires a pull-in voltage of 3.1V for 2.4 μm displacement in 67.14 μs time. The proposed switch is analysed in COMSOL software, and its RF characteristics are simulated in HFSS.

Design and performance analysis of hybrid SPDT RF MEMS switch

This paper presents the design and simulation of Hybrid type RF MEMS switch for satellite communication application. The Hybrid switch beam is having non-uniform meanders and holes. The gold material is used as a beam and CPW. The gap between the beam and dielectric is 3 μm. The design is based on the shunt and series configuration consisting of 2 capacitive switches and 2 Ohmic switches. The performance analysis is done by using the HFSS tool. The individual Ohmic switch having 31 dB isolation and capacitive switch having 67 dB isolation. The proposed Hybrid switch having 87 dB isolation when both switches are in the OFF state. During ON state, the switch shows the low insertion loss of − 0.18 dB and return loss of − 63 dB at 16 GHz.

Design and analysis of a RF MEMS shunt switch using U-shaped meanders for low actuation voltage

This paper presents the design and simulation of RF MEMS switch using uniform U-Shaped meanders. High isolation and low insertion loss are the main performance parameters enhanced by considering the inductive sections on the design and developing high capacitance using HfO2 as a dielectric medium. The inductive sections in the design help maintain the device at resonance. The proposed uniform U-shaped meanders lower the spring constant and reduce the Pull-in-voltage of the switch. The performance characteristics are observed by simulating the proposed switch in the electromechanics environment using the COMSOL FEM tool. The switch exhibits a low Pull-in-voltage of 5.2 V with a very low switching time of 23.1 µs. Total capacitance of 42.19 fF is formed during upstate which provides a low insertion loss of less than 0.1 dB. Capacitance of 19.11 pF during downstate provides high isolation of − 42.11 dB.