Metal contact RF MEMS switch design for high performance in Ka band

Abstract

RF/microwave systems require switches to achieve tunability and reconfigurability. MEMS switches have always been a priority due to excellent RF performance (low insertion loss and high isolation). In this work, we present an RF Micro-Electro-Mechanical-System (RF MEMS) series switch that provides insertion loss less than 0.6 dB (on switch) and isolation better than 15 dB (off switch) at 40GHz. The designed switch consists of serpentine arms on the fixed end and two free-moving arms on another end. These free arms have individual contact points to overcome asperity problem during on state. To avoid self-actuation, bumps (0.6um) are used at the bottom side. This electrostatically actuated switch requires a pull-in voltage of 3.1V for 2.4 μm displacement in 67.14 μs time. The proposed switch is analysed in COMSOL software, and its RF characteristics are simulated in HFSS.