Abstract
Radio frequency microelectromechanical systems (RF MEMS) switch technology may have the potential to replace semiconductor technology in future communication systems as well as communication satellites, wireless and mobile phones. RF MEMS switches are being developed for low insertion loss, high isolation loss and high linearity that are required over a broad frequency band application. In wireless mobile communication systems, microstrip transmission lines (t-line) have received attention for their attractive benefits such as low profile, light weight, and easy fabrication. The present work has thus been to explore the design and modelling of low loss RF MEMS switches implemented in a microstrip discontinuity t-line configuration. The electromagnetic modelling of an RF MEMS switch with a microstrip line is presented with a simple analytical model to determine the scattering parameters. This study shows that an RF MEMS switch with a microstrip t-line provided less than 0.01 dB–0.05 dB insertion loss for 50 GHz frequency. Moreover, there is an isolation loss of 50 dB over frequencies up to 50 GHz frequency. This low insertion and high isolation loss in the single beam RF MEMS switch with a microstrip discontinuity t-line contributes to configuring a low loss transmission line for RF communication.DOI: http://dx.doi.org/10.5755/j01.eie.24.5.21842
Highlights
The Radio frequency microelectromechanical systems (RF MEMS) switch is a switching device used in the RF range, which is fabricated using micromachining technology
Small size, light weight, more flexibility, less insertion loss and high isolation are the usual requirements for RF communication in high frequency applications and can be provided by the RF MEMS switch [1], [2]
The isolation is defined in “OFF” state as Insertion loss: This loss of the signal occurs during the transmission from one terminal to another in a high frequency RF MEMS switch in a 2-port network after the switch has been closed
Summary
The RF MEMS switch is a switching device used in the RF range, which is fabricated using micromachining technology. In order to increase the isolation and decrease the insertion loss of RF MEMS switches, geometrical parameters must be considered Many efforts such as to decrease the gap, width and overlap length between the signal line and increase the dielectric constant are needed to been at the cost of RF performance [3]. To accurately calculate the behaviour of a lumped element at microwave frequencies it is necessary to consider the transmission line length, width, and thickness of metal (due to the skin effect). Calculation was done by using the high frequency RF CAD algorithms [6], where all the formulas are adopted This allows the discussion of additional aspects of microstrip lines with discontinuities, including frequency-dependent effects, for a better understanding
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