MEMS switch as high speed sample and hold circuit

Abstract

This paper introduces a use of special design MEMS used as low insertion loss sample and hold (S/H) circuit, replacing the GaAsFET switch with MEMS switch. The use of electrostatic MEMS switches is attractive because of its advantages, such as very low power consumption, low insertion loss and high isolation. The introduced MEMS switch is capable to perform at high speed, since it does not include transistor in its structure, insertion loss in the case of GaAsFET switch is −10.506 dB while its value in the case of MEMS switch is −.086 db at 20GHZ, the proposed circuit have insertion loss reduction 99.2%.