Abstract
The paper presents a design and mathematical analysis of capacitive RF MEMS switch for achieving high isolation, low insertion loss and low pull in voltage. The proposed design includes central electrode for RF path and ground plane around it. Structure is simulated on silicon substrate with gold as the conducting material. Silicon dioxide is used as the dielectric layer to ensure better isolation of the switch along with reliability. High isolation of -35dB and insertion loss of less than -0.1dB is achieved for the frequency range upto 30 GHz. The structure has very low pull in voltage which gives it advantages in terms of low power consumption with other MEMS switches. RF design is implemented on CST microwave studio. Era of new wireless standards like 5G requires high linearity & wider bandwidth operation. RF MEMS switches have many wireless communication application including cellular base station, mobile handset and tunable filters etc.
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