Design and simulation of RF MEMS switch for use in the millimetre wavelength range and SPDT RF MEMS switch

Abstract

This article describes in detail the design of a shunt capacitive RF MEMS switch for Ka-frequency band, as well as the design of a single-pole-double-directional RF MEMS switch made on its basis. An electrostatic and electromagnetic analysis was performed using the MATLAB and ANSYS HFSS software package. The switch uses a 1.52 V actuation voltage and 1.3 μs of switching time to move the membrane from the up state to the down state. The operating frequency range of this switch is between 24-34 GHz with isolation of -53 dB at 29 GHz and reflection loss of -0.25 dB for this frequency range. The design of the switch is made on a GaAs substrate with a thickness of 525 μm with a double-sided insulating layer of silicon oxide with a thickness of 2 μm.