Abstract
In this paper, we propose a graphene RF MEMS switch design for the X–V band. The structural parameters of graphene, such as the number of layers, the thickness of the medium and the material of the upper electrode, were analyzed by HFSS simulation software. The drive voltage of the switch was found to be as low as 3 V. The switching time is 320 ns. The highest isolation is −47.46 dB@8 GHz; In the 2–56 GHz band, the isolation is better than −20dB. Moreover, we carry out the process design of the switch, including key techniques such as graphene beam fabrication and graphene transfer, it shows that the switch has a great application prospect in the future.
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