The forward and reverse bias capacitance–voltage ( C– V) and conductance–voltage ( G/ ω– V) characteristics of novel Si solar cells are studied over a wide frequency and temperature range of 10–500 kHz and 79–400 K, respectively. Both the density of interface states N ss and series resistance R s were strongly frequency dependent and decreased with increasing frequency. The effect of R s on the capacitance ( C) and conductance ( G) are found noticable at high frequencies. Therefore, the high frequencies capacitance and conductance are measured between −6 and 6 V and corrected for the effect of series resistance R s to obtain real junction capacitance C c and conductance G c using the Nicollian and Goetzberger technique. The experimental C– V– f and G/ ω– V– f characteristics of Si solar cells show fairly large frequency dispersion especially at low frequencies due to surface states N ss in equilibrium with the semiconductor. The distribution profile of R s– V gives a peak in the accumulation region at high frequencies and disappears with decreasing frequencies. It can be concluded that the values of R s are significant only in the downward curvature of the forward bias C– V characteristics and accumulation region, but the values of N ss are significant in both the inversion and depletion region.