Abstract
Silicon wafers grown by the Magnetic Czochralski (MCZ) method have been processed in form of pad diodes at Instituto de Microelectrónica de Barcelona (IMB-CNM) facilities. The n-type MCZ wafers were manufactured by Okmetic and they have a nominal resistivity of 1 kΩ cm. Diodes were characterized by reverse current and capacitance measurements before and after irradiations. The MCZ diodes were irradiated in a 24 GeV proton beam at CERN PS facilities and their annealing behavior with time was compared to that shown by oxygenated FZ diodes processed in the same way. FZ and MCZ diodes were irradiated up to fluences of 10 16 p/cm 2 which corresponds to the maximum fluence foreseen in the inner part of the future ATLAS upgrade in view of a Super-LHC with an increase in the luminosity.
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